• 2018
  1. Jongmyeong Kim, Daeyoung Moon, Seungmin Lee, Donghyun Lee, Duyoung Yang, Jeonghwan Jang, Yongjo Park*, and Euijoon Yoon*, "Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate," in Applied Physics Letters, May-May, 2018.
  2. J. S. Kwak, Y. S. Jo, S. U. Song, J. H. Kim, S.-Y. Kim, J.-U. Lee, S. W. Lee, J. M. Park, K. W. Kim, G.-D. Lee, J.-W. Yoo, S. Y. Kim, Y.-M. Kong, G.-H. Lee, J. C. Park, X. D. Xu, H. S. Cheong, E. J. Yoon, Z. H. Lee*, and S.-Y. Kwon*, "Single-Crystalline Nanobelts Composed of Transition Metal Ditellurides," in Advanced Materials, May-May, 2018.
  3. In-Su Shin, Jongmyeong Kim, Donghyun Lee, Donghyun Kim, Yongjo Park*, and Euijoon Yoon*, "Epitaxial growth of single-crystalline AlN layer on Si(111) by DC magnetron sputtering at room temperature," in Japanese Journal of Applied Physics, Vol. 57, Apr.-Apr., 2018.
  4. Keun Wook Shin, Sukchan Song, Hyun-Woo Kim, Gun-Do Lee, and Euijoon Yoon*, "Lattice contraction with boron doping in fully strained SiGe epitaxial layers," in Japanese Journal of Applied Physics, Apr.-Apr., 2018.
  5. Dae-Myeong Geum, SangHyeon Kim, SooSeok Kang, Hosung Kim, Hwanyeol Park, Il Pyo Rho, Seung Yeop Ahn, Jindong Song, Won Jun Choi, and Euijoon Yoon*, "Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substrates," in Optics Express, Vol. 26, No. 6249, pp. 6259, Mar.-Mar., 2018. [PDF]
  6. Sung Gyu Kang, Dae-Young Moon, Jeonghwan Jang, Ju-Young Kim, Jin-Yoo Suh, Euijoon Yoon, Heung Nam Han, and In-Suk Choi, "Flaw-containing Alumina hollow nanostructures have ultrahigh fracture strength to be incorporated into high-efficiency GaN LEDs," in Nano Letters, Jan.-Jan., 2018. [PDF] [DOI]
• 2017
  1. Hwanyeol Park, Sungwoo Lee, Ho Jun Kim, Euijoon Yoon* and Gun-Do Lee*, "Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study," in RSC Advances, Vol. 7, No. 55750, pp. 55755, Dec.-Dec., 2017. [PDF] [DOI]
  2. Min Sup Choi, Byung-ki Cheong,* Chang Ho Ra, Suyoun Lee, Jee-Hwan Bae, Sungwoo Lee, Gun-Do Lee, Cheol-Woong Yang, James Hone, and Won Jong Yoo*, "Electrically Driven Reversible Phase Changes in Layered In2Se3 Crystalline Film," in Advanced Materials, Vol. 29, No. 1703568, Oct.-Oct., 2017. [PDF] [DOI]
  3. Tae-Ryong Kim, Kisu Joo, Boo Taek Lim, Sung-Soon Choi, Boung Ju Lee, Euijoon Yoon, Se Young Jeong*, and Myung Jin Yim*, "Enhanced Thermal Conductivity of the Underfill Materials Using Insulated Core/shell Filler Particles for High Performance Flip Chip Applications," in 2017 IEEE 67th Electronic Components and Technology Conference, Aug.-Aug., 2017. [PDF] [DOI]
  4. Dae-Hyun Nam, Sungwoo Lee, Young-Joo Lee, Jun-Hyun Jo, Euijoon Yoon, Kyung-Woo Yi, Gun-Do Lee,* and Young-Chang Joo*, "Gaseous Nanocarving-mediated Carbon Framework with Spontaneous Metal Assembly for Structure-tunable Metal/Carbon Nanofibers," in Advanced Materials, Vol. 29, No. 1702958, Aug.-Aug., 2017. [PDF] [DOI]
  5. Chuncheng Gong, Sungwoo Lee, Suklyun Hong, Euijoon Yoon, Gun-Do Lee* and Jamie H. Warner*, "Point defects in turbostratic stacked bilayer graphene," in Nanoscale, Vol. 9, No. 13725, Aug.-Aug., 2017. [PDF] [DOI]
  6. Donghyun Lee, Jong Won Lee, Jeonghwan Jang, In-Su Shin, Lu Jin, Jun Hyuk Park, Jungsub Kim, Jinsub Lee, Hye-Seok Noh, Yong-Il Kim, Youngsoo Park, Gun-Do Lee, Yongjo Park, Jong Kyu Kim, and Euijoon Yoon, "Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates," in Applied Physics Letters, Vol. 110, No. 191103, May-May, 2017. [PDF] [DOI]
  7. Dae-Myeong Geum, Min-Su Park, Chang Zoo Kim, Euijoon Yoon, SangHyeon Kim and Won Jun Choi, "Heterogeneously Integrated High-Performance GaAs Single-Junction Solar Cells on Copper," in Journal of the Korean Physical Society, Vol. 70, pp. 693, Apr.-Apr., 2017. [PDF] [DOI]
  8. Sungwoo Lee, Dongwook Kim, Alex W Robertson, Euijoon Yoon, Suklyun Hong, Jisoon Ihm, Jaejun Yu, Jamie H Warner and Gun-Do Lee, "Graphene as a flexible template for controlling magnetic interactions between metal atoms," in Journal of Physics, Vol. 29, No. 085001, Jan.-Jan., 2017. [PDF] [DOI]
• 2016
  1. Sang Wook Han, Youngsin Park, Young Hun Hwang, Soyoung Jekal, Manil Kang, Wang G. Lee, Woochul Yang, Gun-Do Lee & Soon Cheol Hong, "Electron beam-formed ferromagnetic defects on MoS2 surface along 1 T phase transition," in Scientific Reports, Vol. 6, No. 38730, Dec.-Dec., 2016. [PDF] [DOI]
  2. Alex W. Robertson, Yung-Chang Lin, Shanshan Wang, Hidetaka Sawada, Christopher S. Allen, Qu Chen, Sungwoo Lee, Gun-Do Lee, Joohee Lee, Seungwu Han, Euijoon Yoon, Angus I. Kirkland, Heeyeon Kim, Kazu Suenaga, and Jamie H. Warner, "Atomic Structure and Spectroscopy of Single Metal (Cr, V) Substitutional Dopants in Monolayer MoS2," in ACS Nano, Vol. 10, No. 11, pp. 10227, Nov.-Nov., 2016. [PDF] [DOI]
  3. Chuncheng Gong, Kuang He, Gun-Do Lee*, Qu Chen, Alex W. Robertson, Euijoon Yoon, Suklyun Hong§, and Jamie H. Warner*, "In Situ Atomic Level Dynamics of Heterogeneous Nucleation and Growth of Graphene from Inorganic Nanoparticle Seeds," in ACS Nano, Sept.-Sept., 2016. [PDF] [DOI]
  4. Donghyun Lee, In-Su Shin, Lu Jin, Donghyun Kim, Yongjo Park, Euijoon Yoon, "Nanoheteroepitaxy of GaN on AlN/Si(111) nanorods fabricated by nanosphere lithography," in Journal of Crystal Growth, Vol. 444, pp. 9-13, Jun.-Jun., 2016. [PDF] [DOI]
  5. Sehun Park, Daehan Choi, Hwanyeol Park, Daeyoung Moon, Euijoon Yoon, Yongjo Park, Duk Kyu Bae, "Suppression of surface leakage current in InSb photodiode by ZnS passivation," in International Journal of Nanotechnology, Vol. 13, Jun.-Jun., 2016. [PDF] [DOI]
  6. Daeyoung Moon, Jeonghwan Jang, Daehan Choi, In-Su Shin, Donghyun Lee, Dukkyu Bae, Yongjo Park, Euijoon Yoon, "An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN," in Journal of Crystal Growth, Vol. 441, pp. 52–57, May-May, 2016. [PDF] [DOI]
  7. Sewoung Oh, Dong Hwan Jun, Keun Wook Shin, InHye Choi, Sang Hyun Jung, JeHyuk Choi, Won-Kyu Park, Yongjo Park, and Euijoon Yoon, "Control of crack formation for the fabrication of crack-free and self-isolated high efficiency gallium arsenide photovoltaic cells on silicon substrate," in IEEE Journal of Photovoltaics, Vol. 6, No. 4, May-May, 2016. [PDF] [DOI]
  8. Shanshan Wang, Gun-Do Lee, Sungwoo Lee, Euijoon Yoon, Jamie Warner, "Detailed Atomic Reconstruction of Extended Line Defects in Monolayer MoS2," in ACS Nano, Vol. 10, No. 5, pp. 5419, May-May, 2016. [PDF] [DOI]
  9. Seong Kwang Kim, Jungmin Lee a, Dae-Myeong Geum, Min-Su Park, Won Jun Choi, Sung-Jin Choi, Dae Hwan Kim, Sanghyeon Kim*, Dong Myong Kim*, "Fully subthreshold current-based characterization of interface traps and surface potential in III–V-on-insulator MOSFETs," in Solid-State Electronics, Vol. 122, No. 8, May-May, 2016. [PDF] [DOI]
  10. Moon, Yoon-Jong; Moon, Dae-Young; Jang, Jeonghwan; Na, Jin-Young; Song, Jung-Hwan ; Seo, Min-Kyo; Kim, Sunghee; Bae, Dukkyu; Park, Eun Hyun; Park, Yongjo; Kim, Sun-Kyung; Yoon, Euijoon, "Microstructured Air Cavities as High-Index-Contrast Substrates with Strong Diffraction for Light-Emitting Diodes," in Nano Letters, Vol. 16, No. 3301, pp. 3308, Apr.-Apr., 2016. [PDF] [DOI]
  11. Dae-Myeong Geum, Min-Su Park, Ju Young Lim, Hyun-Duk Yang, Jin Dong Song, Chang Zoo Kim, Euijoon Yoon, SANGHYEON Kim, and Won Jun Choi, "Ultra-high-throughput production of III-V/Si wafer for electronic and photonic applications," in Scientific Reports, Feb.-Feb., 2016. [PDF] [DOI]
  12. Qu Chen, Alex W. Robertson, Kuang He, Chuncheng Gong, Euijoon Yoon, Angus I. Kirkland, Gun-Do Lee,*, Jamie H. Warner*, "Elongated Silicon−Carbon Bonds at Graphene Edges," in ACS Nano, Vol. 10, No. 1, pp. 142, Jan.-Jan., 2016. [PDF] [DOI]
• 2015
  1. Alex W Robertson, Gun-Do Lee, Kuang He, Chuncheng Gong, Qu Chen, Euijoon Yoon, Angus I Kirkland, Jamie H Warner, "Atomic Structure of Graphene Subnanometer Pores," in ACS Nano, Vol. 9, No. 12, pp. 11599, Nov.-Nov., 2015. [PDF] [DOI]
  2. Jeonghwan Jang, Daeyoung Moon, Hyo-jeong Lee, Donghyun Lee, Daehan Choi, Dukkyu Bae, Hwankuk Yuh, Youngboo Moon, Yongjo Park, Euijoon Yoon, "Incorporation of air-cavity into sapphire substrate and its effect on GaN growth and optical properties," in Journal of crystal growth, Vol. 430, pp. 41, Nov.-Nov., 2015. [PDF] [DOI]
  3. Xiren Chen, Jinwook Jung, Zhen Qi, Liangqing Zhu, Sehun Park, Liang Zhu, Euijoon Yoon, and Jun Shao, "Infrared photoreflectance investigation of resonant levels and band edge structure in InSb," in Optics Letters, Vol. 40, No. 22, pp. 5295, Nov.-Nov., 2015. [PDF] [DOI]
  4. Keun Wook Shin, Sung Hyun Park, Sehun Park, Sewoung Oh, Yongjo Park and Euijoon Yoon∗, "Reduction in Threading Dislocation Density in Ge Epitaxial Layers Grown on Si(001) Substrates by Using Rapid Thermal Annealing," in Journal of the Korean Physical Society, Vol. 67, No. 9, pp. 1646, Nov.-Nov., 2015. [PDF] [DOI]
  5. Chuncheng Gong, Alex W. Robertson, Kuang He, Gun-Do Lee, Euijoon Yoon, Christopher S. Allen, Angus I. Kirkland, and Jamie H. Warner, "Thermally Induced Dynamics of Dislocations in Graphene at Atomic Resolution," in ACS Nano, Vol. 9, No. 10, pp. 10066, Oct.-Oct., 2015. [PDF] [DOI]
  6. Alex W. Robertson, Gun-Do Lee, Kuang He, Ye Fan, Christopher S. Allen, Sungwoo Lee, Heeyeon Kim, Euijoon Yoon, Haimei Zheng, Angus I. Kirkland, and Jamie H. Warner, "Partial Dislocations in Graphene and Their Atomic Level Migration Dynamics," in Nano Letters, Vol. 15, No. 9, pp. 5950, Aug.-Aug., 2015. [PDF] [DOI]
  7. Qu Chen, Alex W. Robertson, Kuang He, Chuncheng Gong, Euijoon Yoon, Gun-Do Lee, Jamie H. Warner, "Atomic Level Distributed Strain within Graphene Divacancies from Bond Rotations," in ACS Nano, Vol. 9, No. 8, pp. 8599, Jul.-Jul., 2015. [PDF] [DOI]
  8. Qu Chen, Ai Leen Koh, Alex W. Robertson, Kuang He, Sungwoo Lee, Euijoon Yoon, Gun-Do Lee, Robert Sinclair, Jamie H. Warner, "Rotating Anisotropic Crystalline Silicon Nanoclusters in Graphene," in ACS Nano, Vol. 9, No. 10, pp. 9497, Jul.-Jul., 2015. [PDF] [DOI]
  9. In-Su Shin, Donghyun Kim, Donghyun Lee, Yumin Koh, Keun Man Song, Chan Soo Shin, Yongjo Park, Euijoon Yoon, "A new growth method of semi-insulating GaN layer for HEMT structure by eliminating degenerate layer at GaN/sapphire interface," in Current Applied Physics, Vol. 15, pp. S11, Apr.-Apr., 2015. [PDF] [DOI]
  10. Dongwook Kim, Youngkuk Kim, Jisoon Ihm, Euijoon Yoon, Gun-Do Lee, "Atomic Scale Mechanism of Grain Boundary Motion in Graphene," in Carbon, Vol. 84, pp. 146, Apr.-Apr., 2015. [PDF] [DOI]
  11. Zhengyu He, Yuewen Sheng, Youmin Rong, Gun-Do Lee, Ju Li, and Jamie H. Warner, "Layer-Dependent Modulation of Tungsten Disulfide Photoluminescence by Lateral Electric Fields," in ACS Nano, Vol. 9, No. 3, pp. 2740, Mar.-Mar., 2015. [PDF] [DOI]
  12. Sang-Moon Lee, Young Jin Cho, Jong-Bong Park, Keun Wook Shin, Euichul Hwang, Sunghun Lee, Myoung-Jae Lee, Seong-Ho Cho, Dong Su Shin, Jinsub Park, Euijoon Yoon, "Effects of growth temperature on surface morphology of InP grown on patterned Si(001) substrates," in Journal of crystal growth, Vol. 416, pp. 113, Feb.-Feb., 2015. [PDF] [DOI]
  13. Keun Wook Shin, Sung Hyun Park, Yongjo Park, and Euijoon Yoon, "Growth of high quality Ge layer on silica nano-spheres intergrated Ge/Si template using UHV-CVD," in ECS J. Solid State Sci. Technol., Vol. 4, No. 3, pp. 83, Jan.-Jan., 2015. [PDF] [DOI]
  14. Chuncheng Gong, Kuang He, Alex W. Robertson, Euijoon Yoon, Gun-Do Lee, Jamie H Warner, "Spatially Dependent Lattice Deformations for Dislocations and the Edges of Graphene," in ACS Nano, Vol. 9, No. 1, pp. 656, Jan.-Jan., 2015. [PDF] [DOI]
• 2014
  1. Gun-Do Lee, Euijoon Yoon, Kuang He, Alex W. Robertson, Jamie H. Warner, "Detailed Formation Processes of Stable Dislocations in Graphene," in Nano scale, Vol. 6, pp. 14836, Dec.-Dec., 2014. [PDF] [DOI]
  2. Kuang He, Alex.W.Robertson, Sungwoo Lee, Euijoon Yoon, Gun-Do Lee, and Jamie H.Warner, "Extended Klein Edges in Graphene," in ACS Nano, Vol. 8, No. 12, pp. 12272, Nov.-Nov., 2014. [PDF] [DOI]
  3. Sangsoo Lee, Yong-Hoon Son, Yongjo Park, Kihyun Hwang, Yoo Gyun Shin, Euijoon Yoon, "Ge surface-energy-driven secondary grain growth via two-step annealing," in Thin Solid Films, Vol. 571, pp. 108, Nov.-Nov., 2014. [PDF] [DOI]
  4. Moonsang Lee, Dmitry Mikulik, Sungsoo Park, Kyuhyun Im, Seong-Ho Cho,Un Jeong Kim, Sungwoo Hwang, and Euijoon Yoon, "Effect of additional hydrochloric acid flow on the growth of non-polar a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy," in Journal of crystal growth, Vol. 404, No. 15, pp. 199, Oct.-Oct., 2014. [PDF] [DOI]
  5. Yong Seung Kim, Kisu Joo, Sahng-Kyoon Jerng, Jae Hong Lee, Euijoon Yoon, Seung-Hyun Chun, "Direct growth of patterned graphene on SiO2 substrates without the use of catalysts or lithography," in Nano scale, Vol. 6, pp. 10100, Sept.-Sept., 2014. [PDF] [DOI]
  6. Sangsoo Lee, Yong-Hoon Son, Kihyun Hwang, Yoo Gyun Shin, and Euijoon Yoon, "Advanced Si solid phase crystallization for vertical channel in vertical NANDs," in APL Materials, Vol. 2, No. 076106, Jul.-Jul., 2014. [PDF] [DOI]
  7. Zhengyu He, Kuang He, Alex W. Robertson, Angus I. Kirkland, Dongwook Kim, Jisoon Ihm, Euijoon Yoon, Gun-Do Lee, and Jamie H. Warner, "Atomic Structure and Dynamics of Metal Dopant Pairs in Graphene," in Nano Letters, Vol. 14, pp. 3766, Jul.-Jul., 2014. [PDF] [DOI]
  8. Alex W. Robertson, Gun-Do Lee, Kuang He, Euijoon Yoon, Angus I. Kirkland, and Jamie H. Warner, "The Role of the Bridging Atom in Stabilizing Odd Numbered Graphene Vacancies," in Nano Letters, Vol. 14, pp. 3972, Jul.-Jul., 2014. [PDF] [DOI]
  9. Chulkyun Seok, Minkyung Choi, In-Sang Yang, Sehun Park, Yongjo Park and Euijoon Yoon, "Multi-step plasma etching process for development of highly photosensitive InSb mid-IR FPAs," in Proc. SPIE 9070, Infrared Technology and Applications XL, Jun.-Jun., 2014. [PDF] [DOI]
  10. Chulkyun Seok, Sujin Kim, Jaeyel Lee, Sehun Park, Yongjo Park and Euijoon Yoon, "Analysis of failure of C-V characteristics of MIS structure with SiO2 passivation layer deposited on InSb substrate via Raman spectroscopy," in MRS/Proceedings, Vol. 1670, May-May, 2014. [PDF] [DOI]
  11. Yong-Hoon Son, Seung Jae Baik, Kihyun Hwang, Myung Gon Kang, and Euijoon Yoon, "High quality vertical silicon channel by laser-induced epitaxial growth for nanoscale memory integration," in Jounal of Semiconductor Technology and Science, Vol. 14, No. 2, Apr.-Apr., 2014. [PDF] [DOI]
  12. Yong Seung Kim, Kisu Joo, Sahng-Kyoon Jerng, Jae Hong Lee, Daeyoung Moon, Jonghak Kim, Euijoon Yoon, Seung-Hyun Chun, "Direct Integration of Polycrystalline Graphene into Light Emitting Diodes by Plasma-Assisted Metal-Catalyst-Free Synthesis," in ACS nano, Vol. 8, No. 2230, pp. 2236, Mar.-Mar., 2014. [PDF] [DOI]
  13. Bumho Kim, Daeyoung Moon, Kisu Joo, Sewoung Oh, Young Kuk Lee, Yongjo Park, Yasushi Nanishi, and Euijoon Yoon, "Investigation of leakage current paths in n-GaN by conductive atomic force microscopy," in Applied Physics Letters, Vol. 104, pp. 102101, Mar.-Mar., 2014. [PDF] [DOI]
  14. Alex W. Robertson, Gun-Do Lee, Kuang He, Euijoon Yoon, Angus I. Kirkland, and Jamie H. Warner, "Stability and Dynamics of the Tetravacancy in Graphene," in Nano Letters, Vol. 14, No. 1634, pp. 1642, Mar.-Mar., 2014. [PDF] [DOI]
  15. Sehun Park, Jinwook Jung, Chulkyun Seok, Keun Wook Shin, Sung Hyun Park, Yasushi Nanishi, Yongjo Park, Euijoon Yoon, "Effects of TMSb overpressure on InSb surface morphology for InSb epitaxial growth using low pressure metalorganic chemical vapor deposition," in Journal of Crystal Growth, Feb.-Feb., 2014. [PDF] [DOI]
  16. Chulkyun Seok, Minkyung Choi, Sehun Park Jinwook Jung, Yongjo Park, In-Sang Yang, Euijoon Yoon, "Raman spectroscopy of the damages induced by Ar-ion beam etching of InSb(100) surface," in ECS Solid State Letters, Vol. 3, No. 2, Feb.-Feb., 2014. [DOI]
  17. Ke Wang, Tsutomu Araki, Misaichi Takeuchi, Euijoon Yoon, and Yasushi Nanishi, "Selective growth of N-polar InN through an in situ AlN mask on a sapphire substrate," in Applied Physics Letters, Vol. 104, No. 032108, Japan, Jan.-Jan., 2014. [PDF] [DOI]
  18. Kuang He, Gun-Do Lee, Alex W. Robertson, Euijoon Yoon & Jamie H. Warner, "Hydrogen-Free Graphene Edges," in Nature Communications, Vol. 5, No. 3040, 2014. [PDF] [DOI]
• 2013
  1. Jonghak Kim, Heeje Woo, Kisu Joo, Sungwon Tae, Jinsub Park, Daeyoung Moon, Sung Hyun Park, Junghwan Jang, Yigil Cho, Jucheol Park, Hwankuk Yuh, Gun-Do Lee, In-Suk Choi, Yasushi Nanishi, Heung Nam Han, Kookheon Char & Euijoon Yoon, "Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres," in Scientific Reports, Vol. 3, No. 3201, Dec.-Nov., 2013. [DOI]
  2. Moonsang Lee, Dmitry Mikulik, Joosung Kim, Youngjo Tak, Junyoun Kim, Munbo Shim, Youngsoo Park, Uin Chung, Euijoon Yoon, and Sungsoo Park, "A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy," in Applied Physics Express, Vol. 6, No. 125502, Nov.-Nov., 2013. [DOI]
  3. Jamie H. Warner, Gun-Do Lee, Kuang He, Alex. W. Robertson, Euijoon Yoon, and Angus I. Kirkland, "Bond Length and Charge Density Variations within Extended Arm Chair Defects in Graphene," in ACS Nano, Nov.-Nov., 2013. [DOI]
  4. In-Su Shin; Donghyun Lee; Keon-Hoon Lee; Hyosang You; Dae Young Moon; Jinsub Park; Yasuishi Nanishi; Euijoon Yoon, "Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing," in Thin Solid Films, Vol. 546, pp. 118, Nov.-Nov., 2013. [DOI]
  5. Suk-Min Ko, Ho-Sang Kwack, Chunghyun Park, Yang-Seok Yoo, Soon-Yong Kwon, Hee Jin Kim, Euijoon Yoon, Le Si Dang and Yong-Hoon Cho, "Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission," in APPLIED PHYSICS LETTERS, Vol. 103, pp. 222104, Nov.-Nov., 2013. [DOI]
  6. Jamie H. Warner, Ye Fan, Alex W. Robertson, Kuang He, Euijoon Yoon, and Gun Do Lee, "Rippling Graphene at the Nanoscale through Dislocation Addition," in Nano letters, Vol. 13, No. 10, pp. 4937, Oct.-Oct., 2013. [DOI]
  7. Jinsub Park, Keun Wook Shin, Jong Hak Kim and Euijoon Yoon, "Growth of GaN Columns and Microstructures on (111) Si by Using Ge Layer via Metal Organic Chemical Vapor Deposition," in Japanese Journal of Applied Physics, Vol. 52, No. 8S, Aug., 2013. [DOI]
  8. Sahng-Kyoon Jerng, Kisu Joo, Youngwook Kim, Sang-Moon Yoon, Jae Hong Lee, Miyoung Kim, Jun Sung Kim, Euijoon Yoon, Seung-Hyun Chun and Yong Seung Kim, "Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE," in Nanoscale, Aug.-Aug., 2013. [DOI]
  9. Changjae Yang, Sangsoo Lee, Keun-Wook Shin, Sewoung Oh, Daeyoung Moon, Sung-Dae Kim, Young-Woon Kim, Chang-Zoo Kim, Won-kyu Park, Won Jun Choi, Jinsub Park, Euijoon Yoon, "Characterization of deep levels in GaInP on Ge and Ge-on-Si substrates by photoluminescence and cathodoluminescence," in Journal of Crystal Growth, Vol. 370, pp. 168, May-May, 2013. [DOI]
  10. Sang Woo Pak, Dong Uk Lee, Eun Kyu Kim, Sung Hyun Park, Kisu Joo, Euijoon Yoon, "Defect states of a-plane GaN grown on r-plane sapphire by controlled integration of silica nano-spheres," in Journal of Crystal Growth, Vol. 370, pp. 78, May-May, 2013. [DOI]
  11. Gun-Do Lee, Euijoon Yoon, Cai-Zhuang Wang and Kai-Ming Ho, "Atomistic processes of grain boundary motion and annihilation in graphene," in Journal of Physics: Condensed Matter, Vol. 25, No. 15, pp. 155301, Apr.-Apr., 2013. [DOI]
  12. Yong-Hoon Son, Sangsoo Lee, Kihyun Hwang, Seung Jae Baik, and Euijoon Yoon, "Laser-induced epitaxial growth technology for monolithic three dimensional integrated circuits," in ECS Journal of Solid State Science and Technology, Vol. 2, No. 5, pp. 230, Mar.-Mar., 2013. [DOI]
  13. Gun-Do Lee, Euijoon Yoon, Nong-Moon Hwang, Cai-Zhuang Wang, and Kai-Ming Ho, "Formation and development of dislocation in graphene," in Applied Physics Letter, Vol. 102, No. 2, Jan.-Jan., 2013. [DOI]
  14. Yong Seung Kim, Jae Hong Lee, Young Duck Kim, Sahng-Kyoon Jerng, Kisu Joo, Eunho Kim, Jongwan Jung, Euijoon Yoon, Yun Daniel Park, Sunae Seo and Seung-Hyun Chun, "Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition," in Nanoscale, Vol. 5, pp. 1221, Jan.-Jan., 2013. [DOI]
• 2012
  1. Seongjae Cho, Stanley Cheung, Changjae Yang, Hyungjin Kim, Euijoon Yoon, S.J. Ben Yoo, Byung-Gook Park, and James S. Harris,Jr., "1550-nm Germanium Light-Emitting Diode by Momentum Conservation Transport," in The 2nd International Symposium on Photonics and Electronics Convergence (ISPEC), pp. 98, Dec.-Dec., 2012.
  2. In-Su Shin, Ke Wang, Tsutomu Araki, Euijoon Yoon, and Yasushi Nanish, "New Low-Temperature Growth Method for High-Quality Low-Temperature GaN Layer by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy," in Applied Physics Express, Vol. 5, No. 125503, Dec.-Dec., 2012. [DOI]
  3. Sangsoo Lee, Yong-Hoon Son, and Euijoon Yoon,, "Ge Surface-Energy-Driven Secondary Grain Growth for Vertical Channel in 3D NAND Flash Memories," in ECS Transactions, Vol. 50, No. 9, pp. 991, Oct.-Oct., 2012. [DOI]
  4. Jae-Kyung Choi, Jae-Hoon Huh, Sung-Dae Kim, Daeyoung Moon, Duhee Yoon, Kisu Joo, Jinsung Kwak, Jae Hwan Chu, Sung Youb Kim, Kibog Park, Young-Woon Kim, Euijoon Yoon, Hyeonsik Cheong and Soon-Yong Kwon, "One-step graphene coating of heteroepitaxial GaN films," in Nanotechnology, Vol. 23, No. 43, Oct.-Oct., 2012. [DOI]
  5. Kisu Joo, Sahng-Kyoon Jerng, Yong Seung Kim, Bumho Kim, Seunghyun Moon, Daeyoung Moon, Gun-Do Lee, Yoon-Kyu Song, Seung-Hyun Chun, and Euijoon Yoon., "Reduction of graphene damages during the fabrication of InGaN/GaN light emitting diodes with graphene electrodes," in Nanotechnology, Vol. 23, No. 42, Oct.-Oct., 2012. [DOI]
  6. Seongjae Cho, Byung-Gook Park, Changjae Yang, Stanley Cheung, Euijoon Yoon, Theodore I. Kamins, S. J. Ben Yoo, and James S. Harris, Jr., "Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by Γ-valley transport," in OPTICS EXPRESS, Vol. 20, No. 14921, pp. 14927, Jul.-Jul., 2012. [DOI]
  7. S. H. Park, J. Park, D.-J. You, K. Joo, D. Moon, J. Jang, D.-U. Kim, H. Chang, S. Moon, Y.-K. Song, G.-D. Lee, H. Jeon, J. Xu, Y. Nanishi, and E. Yoon, "Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer," in Applied Physics Letter, Vol. 100, pp. 191116, May-May, 2012. [DOI]
  8. Tsutomu Araki, Shuhei Yamashita, Tomohiro Yamaguchi, Euijoon Yoon, Yasushi Nanishi, "Fabrication of a-plane InN nanostructures on patterned a-plane GaN template by ECR-MBE," in physica status solidi a, Vol. 209, No. 3, pp. 447-450, Mar.-Mar., 2012. [DOI]
  9. Jinsub Park, Dae Young Moon, Min Hwa Kim, Sung Hyun Park, Euijoon Yoon, "Growth of GaN branched α-Si3N4 nanowires on (100) Si by metal organic chemical vapor deposition," in Materials Letters, Vol. 76, pp. 106~108, Feb.-Feb., 2012. [DOI]
  10. Jinsub Park, Daeyoung Moon, Sehun Park, Sung Hyun Park, and Euijoon Yoon, "Growth of GaN Layer on Patterned Al/Ti Metal Mask by Metal–Organic Chemical Vapor Deposition," in Japanese Journal of Applied Physics, Vol. 51, Feb.-Feb., 2012. [DOI]
  11. Min Hwa Kim, Dae Young Moon, Jinsub Park, Yasushi Nanishi, Gyu-Chul Yi, and Euijoon Yoon, "Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition," in Phys. Status Solidi A, Vol. 209, No. 1, pp. 50, Jan.-Jan., 2012. [DOI]
  12. Keon-Hun Lee, In Su Shin, Sung Hyun Park, Dae Young Moon, Minhwa Kim, Jinsub Park, Yasushi Nanishi, and Euijoon Yoon, "Growth of Less Bowed GaN Epitaxial Layers on Sapphire Substrates by Formation of Low-Temperature GaN Buffer Layer with Columnar Microstructure," in Japanese Journal of Applied Physics, Vol. 51, Jan.-Jan., 2012. [DOI]
  13. Jinsung Kwak, Jae Hwan Chu, Jae-Kyung Choi, Soon-Dong Park, Heungseok Go, Sung Youb Kim, Kibog Park, Sung-Dae Kim, Young-Woon Kim, Euijoon Yoon, Suneel Kodambaka & Soon-Yong Kwon, "Near room-temperature synthesis of transfer-free graphene films," in Nature communications, Jan.-Jan., 2012. [DOI]
  14. Min Hwa Kim, Kunook Chung, Dae Young Moon, Jong-Myeong Jeon, Miyoung Kim, Jinsub Park, Yasushi Nanishi, Gyu-Chul Yi, and Euijoon Yoon, "Catalyst-Free Metal-Organic Chemical Vapor Deposition Growth of InN Nanorods," in Journal of Nanoscience and Nanotechnology, Vol. 12, No. 1645, pp. 1648, 2012. [DOI]
  15. Jaeyel Lee , Sehun Park , Jungsub Kim , Changjae Yang, Sujin Kim , Chulkyun Seok ,Jinsub Park , Euijoon Yoon, "Comparative analysis of oxide phase formation and its effects on electrical properties of SiO2/InSb metal-oxide-semiconductor structures," in Thin Solid Films, Vol. 520, No. 5382, pp. 5385, 2012. [DOI]
  16. Sung Hyun Park, Daeyoung Moon, Bumho Kim, Kisu Joo, Duck-Jae You,Dong-Uk Kim, Hojun Chang, Heonsu Jeon, Yasushi Nanishi, Euijoon Yoon, "Improved Crystal Quality of a-plane GaN with High- temperature 3-dimensional GaN Buffer Layers Deposited by Using Metal-organic Chemical Vapor Deposition," in Journal of the Korean Physical Society, Vol. 60, No. 8, pp. 1297, 2012. [DOI]
  17. Jiwoong Park, Daeyoung Moon, Sungyun Chung, Euijoon Yoon, and Jinsub Park, "Vertical Array of ZnO Submicrorods on Periodically Polarity-Inverted Templates Using Solution Method," in Journal of Nanoscience and Nanotechnology, Vol. 12, 2012. [DOI]
• 2011
  1. Yong-Hoon Son, Seung Jae Baik, Sanghun Jeon, Jong-Wook Lee, Gihyun Hwang, Yoo Gyun Shin, and Euijoon Yoon, "Highly Manufacturable Device Isolation Technology Using Laser-Induced Epitaxial Growth for Monolithic Stack Devices," in IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 58, No. 11, pp. 3863, Nov.-Nov., 2011. [DOI]
  2. Youngkuk Kim, Jisoon Ihm, Euijoon Yoon and Gun-Do Lee, "Dynamics and stability of divacancy defects in graphene," in PHYSICAL REVIEW B, Vol. 84, pp. 075445, Aug.-Aug., 2011. [DOI]
  3. Jungsub Kim, Changjae Yang, Uk Sim, Gun-Do Lee, Jinsub Park, Youngsoo Lee,and Euijoon Yoon, "Growth mechanism of highly uniform InAs/GaAs quantum dot with periodic arsine interruption by metalorganic chemical vapor deposition," in JOURNAL OF APPLIED PHYSICS, Vol. 110, pp. 044302, Jul.-Aug., 2011. [DOI]
  4. Changjae Yang, Sangsoo Lee, Keun Wook Shin, Sewoung Oh, Jinsub Park,Chang-Zoo Kim, Won-Kyu Park, Seung-kyu Ha,Won Jun Choi, and Euijoon Yoon, "Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics," in APPLIED PHYSICS LETTERS, Vol. 99, pp. 091904, Jul.-Aug., 2011. [DOI]
  5. Pilkyung Moon, Won Jun Choi, Kwangmin Park, Euijoon Yoon, and JaeDong Lee, "Anomalous strain profiles and electronic structures of a GaAs-capped InAs/In0.53Ga0.47As quantum ring," in Journal of Applied Physics, Vol. 109, pp. 103701, May-May, 2011. [DOI]
  6. Takuya Kimura, Eita Fukumoto, Tomohiro Yamaguchi, Ke Wang, Masamitsu Kaneko, Tsutomu Araki, Euijoon Yoon, and Yasushi Nanishi, "Investigation of InN mole fraction fluctuation in InGaN films grown by RF-MBE," in Phys. Status Solidi C, Vol. 8, No. 5, pp. 1499, May-May, 2011. [DOI]
  7. Sung Hyun Park, Jinsub Park, Daeyoung Moon, Namhyuk Kim, Duck-Jae You, Junghwan Kim, Jinki Kang, Sang-Moon Lee, Ju-Sung Kim, Moon-Seung Yang, Taek Kim and Euijoon Yoon, "Effects of r-plane Sapphire Substrate Tilt Angles on the Growth Behavior of Nonpolar a-plane GaN," in Journal of the Korean Physical Society, Vol. 58, No. 4, pp. 906, Apr.-Apr., 2011. [DOI]
  8. Ke Wang, Tomohiro Yamaguchi, Tsutomu Araki, Euijoon Yoon, and Yasushi Nanishi, "In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN," in Japanese Journal of Applied Physics, Vol. 50, pp. 01AE02, Jan.-Jan., 2011. [DOI]
  9. Lee, Seongjae; Han, Il Ki; Kim, Eun Kyu; Rhee, Joo Yull; Yoon, Euijoon; Cheong, Hyeonsik; Choi, Kyoung Jin; Suh, Minah; Jang, Moongyu; Yun, Wan Soo; Chang, Won-Seok, "Selected Peer-Reviewed Papers from NANO KOREA 2009," in Journal of Nanoscience and Nanotechnology, Vol. 11, No. 1, pp. 224-227, Jan.-Jan., 2011. [DOI]
• 2010
  1. Jinsub Park, Ki Hyun Kim, Sung Hyun Park, Euijoon Yoon, and Takafumi Yao, "Catalyst-Free Growth of Vertically Aligned ZnO Nanostructures Arrays on Periodically Polarity-Inverted Substrate," in Applied Physics Express, Vol. 3, pp. 105001, Sept.-Sept., 2010. [DOI]
  2. Gun-Do Lee, Cai-Zhuang Wang, Euijoon Yoon, Nong-Moon Hwang, and Kai-Ming Ho, "The role of pentagon–heptagon pair defect in carbon nanotube: The center of vacancy reconstruction," in Applied Physics Letters, Vol. 97, pp. 093106, Aug.-Aug., 2010. [DOI]
  3. Jaehee Cho, Euijoon Yoon, Yongjo Park, Woo Jin Ha, and Jong Kyu Kim, "Characteristics of Blue and Ultraviolet Light-Emitting Diodes with Current Density and Temperature," in Electronic Materials Letters, Vol. 6, No. 2, pp. 51-53, Jun.-Jun., 2010. [DOI]
  4. Gun-Do Lee, Euijoon Yoon, Nong-Moon Hwang, C. Z. Wang, and K. M. Ho, "Reconstruction and Evaporation at Graphene Nanoribbon Edges," in Phy. Rev. B, Vol. 81, pp. 195419, May-May, 2010. [DOI]
  5. Changjae Yang, Keun Wook Shin, Jungsub Kim, Jaeyel Lee, Chang-Zoo Kim, Ho Kwan Kang, Won-Kyu Park and Euijoon Yoon, "Growth of GaInP Layers on Ge Vicinal Substrates for Multi-junction Solar Cells," in Journal of the Korean Physical Society, Vol. 56, pp. 1387, Apr., 2010. [DOI]
  6. J. S. Park, T. Minegishi, J. W. Lee, S. K. Hong, J. H. Song, J. Y. Lee, E. Yoon,and T. Yao, "Anisotropic properties of periodically polarity-inverted zinc oxide," in Journal of Applide Physics, Vol. 107, pp. 123519, 2010. [DOI]
  7. Changjae Yang, Jungsub Kim, Uk Sim, Jaeyel Lee, Won Jun Choi, and Euijoon Yoon, "Competitive growth mechanisms of InAs quantum dots on InxGa1 − xAs layer during post growth interruption," in Thin Solid Films, Vol. 518, pp. 6361, 2010. [DOI]
  8. Yong-Hoon Son, Kihyun Hwang, Chang-Jin Kang, and Euijoon Yoon, "Laser-Induced Epitaxial Growth (LEG) Technology for Multi-Stacked MOSFETs," in ECS Transactions, Vol. 33, pp. 6, 2010. [DOI]
  9. Keon-Hun Lee, Sung Hyun Park, Jong Hack Kim, Nam Hyuk Kim, Min Hwa Kim, Hyunseok Na, and Euijoon Yoon, "MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain," in Thin Solid Films, Vol. 518, pp. 6365, 2010. [DOI]
  10. Keun Wook Shin, Hyun-Woo Kim, Jungsub Kim, Changjae Yang, Sangsoo Lee and Euijoon Yoon, "The effects of low temperature buffer layer on the growth of pure Ge on Si(001)," in Thin Solid Films, Vol. 518, pp. 6496, 2010. [DOI]
  11. Jinsub Park, Takenari Goto, Sung Hyun Park, Junseok Ha, Euijoon Yoon and Takafumi Yao, "Ultraviolet stimulated emission in periodically polarity-inverted ZnO structures at room temperature," in APPLIED PHYSICS LETTERS, Vol. 97, pp. 171101, 2010. [DOI]
• 2009
  1. Pilkyung Moon, Euijoon Yoon, Weidong Sheng and Jean-Pierre Leburton, "Anisotropic enhancement of piezoelectricity in the optical properties of laterally coupled InAs/GaAs self-assembled quantum dots," in Physical Review B, Vol. 79, pp. 125325, Mar., 2009. [DOI]
  2. Jungsub Kim, Changjae Yang, Uk Sim, Jaeyel Lee, Euijoon Yoon and Youngsoo Lee, "Enhancement of optical properties of InAs quantum dots grown by using periodic arsine interruption," in Thin Solid Films, Vol. 517, pp. 3963, Jan., 2009. [DOI]
  3. Hyun-Woo Kim, Keun Wook Shin, Gun-Do Lee, Euijoon Yoon, "High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition," in Thin Solid Films, Vol. 517, pp. 3990, Jan., 2009. [DOI]
  4. Pilkyung Moon, Kwangmin Park, Euijoon Yoon, and Jean-Pierre Leburton, "Anomalous strain relaxation and light-hole character enhancement in GaAs capped InAs/In(0.53)Ga(0.47)As quantum ring," in Physica Status Solidi RRL, Vol. 3, pp. 76, 2009. [DOI]
  5. Dong Hyuk Kim, Go Eun Lee, Euijoon Yoon, Do-Young Park, Hyeonsik Cheong, Woo Seok Choi, Tae Won Noh, Jin-Hyoung Cho, and Joong-Seo Park, "Effect of dimethylhydrazine on p-type conductivity of as-grown Mg-doped GaN," in Physica Status Solidi RRL, Vol. 3, pp. 52, 2009. [DOI]
  6. J. S. Park, T. Minegishi, S. H. Lee, I. H. Im, S. H. Park, T. Goto, M. W. Cho, and T. Yao, S.K. Hong, J. W. Lee and J. Y. Lee,S. M. Ahn and H. S. Jeon, W. Lee, M. N. Jung, and J. H.Chang, "Fabrication of one-dimensional and two-dimensional periodically polarity inverted ZnO structures using the patterned CrN buffer layers," in Journal of Vacuum Science and Technology B, Vol. 27, pp. 1658, 2009. [DOI]
  7. J. S. Park, S. K. Hong, I. H. Im, J. S. Ha, H. J. Lee, S. H. Park, J. H. Chang, M. W. Cho, and T. Yao, "Growth of high-quality ZnO films on Al2O3 (0001) by plasma-assisted molecular beam epitaxy," in Journal of Crystal Growth, Vol. 311, No. 7, pp. 2163, 2009. [DOI]
  8. Jiwon Park, Sung-Il Baik, Dong-Su Ko, Sung-Hyun Park, Euijoon Yoon and Young-Woon Kim, "Microstructural Investigation of Bilayer Growth of In- and Ga-Rich InGaN Grown by Chemical Vapor Deposition," in Journal of Electronic Materials, Vol. 38, pp. 518, 2009. [DOI]
  9. J. S. Park, Y. Yamazaki, Y. Takahashi, J. H. Chang, S. K. Hong, S. H. Park T. Fujiwara and T. Yao, "Origin of second-order nonlinear optical response of polarity-controlled ZnO," in Applied Physics Letters, Vol. 94, pp. 23118, 2009. [DOI]
  10. J. S. Park, T. Goto, S. K. Hong, S. H. Lee, J. W. Lee, T. Minegishi, S. H. Park, J. H. Chang,D. C. Oh, J. Y. Lee, and T. Yao, "Structural and optical investigations of periodically polarity inverted ZnO heterostructures on (0001) Al2O3," in Applied Physics Letters, Vol. 94, pp. 141904, 2009. [DOI]
  11. Jaehee Cho, Hyungkun Kim, Cheolsoo Sone, Yongjo Park, Young Sic Kim, Shunichi Kubota, and Euijoon Yoon, "Study of UV excited white light-emitting diodes for optimization of luminous efficiency and color rendering index," in Physica Status Solidi RRL, Vol. 3, pp. 34, 2009. [DOI]
• 2008
  1. T.H. Ghonga, Y.D. Kim, E. Ahn, E. Yoon, S.J. An and G.-C. Yi, "Application of spectral reflectance to the monitoring of ZnO nanorod growth," in Applied Surface Science, Vol. 255, pp. 746, 2008. [DOI]
  2. Cai-Zhuang Wang, Gun-Do Lee, Ju Li, Sidney Yip and Kai-Ming Ho, "Atomistic simulation studies of complex carbon and silicon systems using environment-dependent tight-binding potentials," in Scientific Modeling and Simulation, Vol. 15, No. 97, 2008. [DOI]
  3. H.-W. Kim, S. Choi, S. Hong, H. K. Jung, G.-D. Lee, E. Yoon, and C. S. Kim, "Effect of C incorporation on relaxation of SiGe/Si," in Applied Physics Letters, Vol. 93, pp. 221902, 2008. [DOI]
  4. Suk Choi, Hyun Woo Kim, Hee Jin Kim, Sukwon Hong, Gun-Do Lee, and Euijoon Yoon, "Effect of interstitial C incorporation on the Raman scattering of Si(1-x-y)Ge(x)C(y) epitaxial layer," in Applied Physics Letters, Vol. 92, pp. 061906, 2008. [DOI]
  5. J. Kim, C. J. Yang, U. Sim, E. Yoon, Y. Lee, W. J. Choi, "Effect of the Well Layer on the Emission Wavelength of InAs/InGaAs Dot-in a-Well Structure," in Journal of the Korean Physical Society, Vol. 52, pp. s34, 2008. [DOI]
  6. Jaehee Cho, Hyunsoo Kim, Yongjo Park, and Euijoon Yoon, "Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes," in Applied Physics Express, Vol. 1, pp. 052001, 2008. [DOI]
  7. Jaehee Cho, Euijoon Yoon, Hyunsoo Kim, Yongjo Park, and Joon Seop Kwak, "Improved Emission Efficiency in InGaN Light-Emitting Diodes Using Reverse Bias in Pulsed Voltage Operation," in IEEE Photonics Technology Letters, Vol. 20, pp. 190, 2008. [DOI]
  8. Seung Soo Oh, Do Hyun Kim, Myoung-Woon Moon, Ashkan Vaziri, Miyoung Kim, Euijoon Yoon, Kyu Hwan Oh, and John W. Hutchinson, "Indium Nanowires Synthesized at an Ultrafast Rate," in Advanced Materials, Vol. 20, pp. 1093, 2008. [DOI]
  9. J.S.Byun, J.J.Yoon, Y.D.Kim E.Ahn, E.Yoon, S.J.An and G.-C.Yi, "Multilayer Calculation on SR Signal during Growth of ZnO Nanorod," in Journal of the Korean Physical Society, Vol. 53, pp. 388, 2008. [DOI]
  10. Soon-Yong Kwon, Hee Jin Kim, Euijoon Yoon, Yudong Jang, Ki-Ju Yee, Donghan Lee, Seoung-Hwan Park, Do-Young Park, Hyeonsik Cheong, Fabian Rol, and Le Si Dang, "Optical and microstructural studies of atomically flat ultrathin In-rich InGaN/GaN multiple quantum wells," in Journal of Applied Physics, Vol. 103, pp. 063509, 2008. [DOI]
  11. E. Ahn, K. Park, B. Kim, Y.D. Kim, and E. Yoon, "Real-time monitoring of InAs QD growth procedure on InP substrate by spectral reflectance," in Applied Surface Science, Vol. 255, pp. 656, 2008. [DOI]
  12. Byoung Wook Jeong, Jisoon Ihm, and Gun-Do Lee, "Stability of dislocation defect with two pentagon-heptagon pairs in graphene," in Phys. Rev. B, Vol. 78, No. 165403, 2008. [DOI]
  13. Gun-Do Lee, C. Z. Wang, Euijoon Yoon, Nong-Moon Hwang, and K. M. Ho, "The formation of pentagon-heptagon pair defect by the reconstruction of vacancy defects in carbon nanotube," in Applied Physics Letters, Vol. 91, pp. 043104, 2008. [DOI]
  14. Ho-Sang Kwack, Bong-Joon Kwon, Jin-Soo Chung, Yong-Hoon Cho, Soon-Yong Kwon, Hee Jin Kim, and Euijoon Yoon, "Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition," in Applied Physics Letters, Vol. 93, pp. 161905, 2008. [DOI]
• 2007
  1. Jaehee Cho, Jaewook Jung, Jung Hye Chae, Hyungkun Kim, Hyunsoo Kim, Jeong Wook Lee, Sukho Yoon, Cheolsoo Sone, Taehoon Jang, Yongjo Park, and Euijoon Yoon, "Alternating-current Light Emitting Diodes with a Diode Bridge Circuitry," in Japanese Journal of Applied Physics, Vol. 46, pp. L1194, 2007. [DOI]
  2. Y. Lee, E. Ahn, J. Kim, P. Moon, C. Yang, E. Yoon, H. Lim and H. Cheong, "Complete suppression of large InAs island formation on GaAs by metal organic chemical vapor deposition with periodic AsH3 interruption," in Applied Physics Letters, Vol. 90, pp. 033105, 2007. [DOI]
  3. Gun-Do Lee, Cai-Zhuang Wang, Jaejun Yu, Euijoon Yoon, Nong-Moon Hwang, and Kai-Ming Ho, "Formation of carbon nanotube semiconductor-metal intramolecular junctions by self-assembly of vacancy defects," in Physical Review B, Vol. 76, pp. 165413, 2007. [DOI]
  4. Hee Jin Kim, Soon-Yong Kwon, Hyun Jin Kim, Hyunseok Na, Yoori Shin, Keon-Hun Lee, Ho-Sang Kwak, Yong Hoon Cho, Jung Won Yoon, Hyeonsik Cheong, Euijoon Yoon, "Growth behavior and optical properties of In-rich InGaN quantum dots by metal-organic chemical vapor deposition," in Physica Status Solidi C - Conferences, Vol. 4, pp. 112, 2007. [DOI]
  5. Eungjin Ahn, Young Soo Lee, Jungsub Kim, Young Dong Kim, Euijoon Yoon, "In situ monitoring of the growth procedure of InAs layer by spectral reflectance," in Journal of Crystal Growth, Vol. 298, pp. 50, 2007. [DOI]
  6. Soon-Yong Kwon, Zaiyuan Ren, Qian Sun, Jung Han, Young-Woon Kim, Euijoon Yoon, Bo Hyun Kong, Hyung Koun Cho, Il-Joong Kim and Hyeonsik Cheong, "Observation of oxide precipitates in InN nanostructures," in Applied Physics Letters, Vol. 91, pp. 234102, 2007. [DOI]
  7. Seoung-Hwan Park, jongwoon Park, Euijoon Yoon, "Optical gain in InGaN/GaN quantum well structures with embedded AlGaN δ layer," in Applied Physics Letters, Vol. 90, pp. 023508, 2007. [DOI]
  8. Jin Soak Kim, Eun Kyu Kim, Hee Jin Kim, and Euijoon Yoon, "Study on the energy-band structure of Indium-rich InGaN/GaN quantum dot system," in Journal of the Korean Physical Society, Vol. 51, pp. 1195, 2007.
  9. Hyoun Woo Kim, Seung Hyun Shim, Jong Woo Lee, Chongmu Lee, Hae Jin Hwang, Sung-Yoon Chung, Hyung-Sun Kim and Sun Keun Hwang, Geun Young Yeom, Nae-Eung Lee and Ji-Beom Yoo, Young-Chang Joo, Hyeong Joon Kim and Euijoon Yoon, "Synthesis, structural characterization and photoluminescence properties of SiOx nanowires prepared using a palladium catalyst," in Journal of the Korean Physical Society, Vol. 50, pp. 1799, 2007.
  10. H.-W. Kim , S. Choi , S. Hong , H. K. Jung , G. D. Lee , E. Yoon and C. S. Kim, "The effect of the C incorporation pathway on the growth rate of epitaxial SiGeC," in Journal of the Korean Physical Society, Vol. 50, pp. 685, 2007.
  11. Dong Woo Song, Hee Jin Kim, Yong Seon Jeon, Euijoon Yoon, "Thermodynamic study of AlGaN composition grown by metalorganic chemical vapor deposition," in Journal of Crystal Growth, Vol. 298, pp. 367, 2007. [DOI]
  12. Seung Soo Oh, Do Hyun Kim, Sang Hoon Lee, Hee Jin Kim, Hee-Suk Chung, Miyoung Kim, Kyu Hwan Oh, Euijoon Yoon, "Ultra-fast growth of In nanowires on In-rich InGaN layers by focused ion beam irradiation," in Journal of Physics: Conference Series, Vol. 61, pp. 884, 2007. [DOI]
• 2006
  1. S.-N. Lee, T. Jang, J. K. Son, H. S. Paek, T. Sakong, E. Yoon, O.H. Nam and Y. Park, "Carrier transport by formation of two-dimensional hole gas in p-type Al0.1Ga0.9N/GaN superlattice for AlGaInN-based laser diode," in Journal of Crystal Growth, Vol. 287, pp. 554, 2006. [DOI]
  2. T.-S. Park, H. J. Cho, J. D. Choe, S. Y. Han, D. Park, K. Kim, E. Yoon and J.-H. Lee, "Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs)," in IEEE Transactions on Electron Devices, Vol. 53, pp. 481, 2006. [DOI]
  3. Gun-Do Lee, Sukwon Hong, Hyun-Woo Kim, and Euijoon Yoon, "Diffusion of adatom in the selective epitaxial growth of Si(100): A molecular dynamics study," in Applied Physics Letters, Vol. 88, pp. 231909-1, 2006. [DOI]
  4. Y. Sun, Y.-H. Cho, H. M. Kim, T. W. Kang, S. Y. Kwon and E. Yoon, "Effect of growth interruption on optical properties of In-rich InGaN/GaN single quantum well structures," in Journal of Applied Physics, Vol. 100, pp. 043520-1, 2006. [DOI]
  5. E. K. Kim and J. S. Kim, S.-Y. Kwon, H. J. Kim and E. Yoon, "Electrical study on indium-rich InGaN/GaN multi-quantum-well system," in Journal of the Korean Physical Society, Vol. 49, pp. 2132, 2006.
  6. J.-W. Yoon, S. S. Kim, H. Cheong, H.-C. Seo, S.-Y. Kwon, H. J. Kim, Y. Shin, E. Yoon and Y.-S. Park, "Electroreflectance and photoluminescence study on InGaN alloys," in Journal of the Korean Physical Society, Vol. 49, pp. 2143, 2006.
  7. P. Moon, Y. Lee, E. Ahn, J. Kim, C. Yang, G.-D. Lee, E. Yoon, J.-P. Leburton, "Enhanced piezoelectric effects in three-dimensionally coupled self-assembled quantum dot structures," in Electronic Materials Letters, Vol. 2, pp. 87, 2006.
  8. H. Shin, J.-B. Kim, Y.-H. Yoo, W. Lee, E. Yoon and Y.-M. Yu, "Enhanced strain of InAs quantum dots by an InGaAs ternary layer in a GaAs matrix," in Journal of Applied Physics, Vol. 99, pp. 023521-1, 2006. [DOI]
  9. S. Hong, H.-W. Kim, D. K. Bae, S. C. Song, G.-D. Lee, E. Yoon, C. S. Kim, Y. L. Foo and J. E. Green, "Formation of flat, relaxed Si1-xGeX alloys on Si(001) without buffer layers," in Applied Physics Letters, Vol. 88, pp. 122103-1, 2006. [DOI]
  10. S.-N. Lee, H. S. Paek, J. K. Son, T. Sakong, E. Yoon, O.H. Nam and Y. Park, "Growth of InGaN multiple quantum wells and GaN eplilayer on GaN substrate," in Physica B - Condensed Matter, Vol. 376, pp. 532, 2006. [DOI]
  11. S.-N. Lee, S. Y. Cho, H. Y. Ryu, J. K. Son, H. S. Paek, T. Sakong, T. Jang, K. K. Choi, K. H. Ha, M. H. Yang, O. H. Nam, Y. Park and E. Yoon, "High-power GaN-based blue-violet laser diodes with AlGaN/GaN multiquantum barriers," in Applied Physics Letters, Vol. 88, pp. 111101-1, 2006. [DOI]
  12. Soon-Yong Kwon, Hyun Jin Kim, Hyunseok Na, Young-Woon Kim, Hui-Chan Seo, Hee Jin Kim, Yoori Shin, and Euijoon Yoon, Yoon-Soo Park, "In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition," in Journal of Applied Physics, Vol. 99, pp. 044906, 2006. [DOI]
  13. E. Ahn, Y. S. Lee, J. Kim, E. Yoon and Y. D. Kim, "In-situ monitoring of InAs/GaAs QDs by using spectral reflectance," in Journal of the Korean Physical Society, Vol. 49, pp. 947, 2006.
  14. S.-Y. Kwon, S.-I. Baik, H.J. Kim, P. Moon, Y.-W. Kim, J.-W. Yoon, H. Cheong, Y.-S. Park, and E. Yoon, "Strong near-ultraviolet and blue emissions at room temperature from two-step grown In-rich InGaN/GaN multiple quantum wells," in Micro & Nano Letters, Vol. 1, pp. 53, 2006. [DOI]
  15. G.-D. Lee, C. Z. Wang, E. Yoon, N.-M. Hwang, and K. M. Ho, "Vacancy defects and the formation of local haeckelite structures in graphene from tight-binding molecular dynamics," in Physical Review B, Vol. 74, pp. 245411-1, 2006. [DOI]
• 2005
  1. Hyunho Shin, Euijoon Yoon, Kug-Sun Hong, Woong Lee and Yo-Han Yoo, "Blueshifts of emission energy from InAs quantum dots in GaAs matrix due to narrowed interdot spacing: a token of the integrity of a nanostructure," in Applied Physics A - Materials Science & Processing, Vol. 81, pp. 715, 2005. [DOI]
  2. Tai-su Park, Siyoung Choi, Deok-Hyung Lee, U-In Chung, Joo Tae Moon, Euijoon Yoon, Jong-Ho Lee, "Body-tied triple-gate NMOSFET fabrication using bulk Si wafer," in Solid-State Electronics, Vol. 49, pp. 377, 2005. [DOI]
  3. Jae Kyeong Jeong, Jung-Hae Choi, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang and Hyeong Joon Kim, "Buffer-layer-free growth of high-quality epitaxial GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition," in Journal of Crystal Growth, Vol. 276, pp. 407, 2005. [DOI]
  4. Kyoung-Rok Han, Byung-Kil Choi, Tai-su Park, Euijoon Yoon, and Jong-Ho Lee, "Device Design Consideration for 50 nm Dynamic Random Access Memory (DRAM) Using Bulk FinFET," in Japanese Journal of Applied Physics, Vol. 44, pp. 2176, 2005. [DOI]
  5. G.-D. Lee, C. Z. Wang, E. Yoon, N.-M. Hwang, D.-Y. Kim and K. M. Ho, "Diffusion, coalescence, and reconstruction of vacancy defects in graphene layers," in Physical Review Letters, Vol. 95, pp. 205501-1, 2005. [DOI]
  6. Sung-Nam Lee, JoongKon Son, Hosun Pa다, Tan Sakong, Wonseok Lee, Kihong Kim, Euijoon Yoon, Jiyoung Kim, Yong-Hoon Cho, YoonJae Lee, SangSoo Kim, DoYoung Noh, Okhyun Nam, Yongjo Park, "Effect of thermal damage on optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multi-quantum wells grown by MOCVD," in Journal of Crystal Growth, Vol. 275, pp. e1041, 2005. [DOI]
  7. J.S. Kim, E.K. Kim, K. Park, E. Yoon, I.K. Han and Y.J. Park, "Effects of rapid thermal annealing on the energy levels of InAs/InP self-assembled quantum dots," in Physica E - Low-dimensional Systems & Nanostructures, Vol. 26, pp. 91, 2005. [DOI]
  8. K. Park, P. Moon, E. Ahn, S. Hong, E. Yoon, J. W. Yoon, H. Cheong and J.-P. Leburton, "Effects of thin GaAs insertion layer on InAs/(InGaAs)/InP(001) quantum dots grown by metalorganic chemical vapor deposition," in Applied Physics Letters, Vol. 86, pp. 223110-1, 2005. [DOI]
  9. J.-W. Yoon, S. S. Kim, H. Cheong, H.-C. Seo, S.-Y. Kwon, H. J. Kim, Y. Shin, E. Yoon and Y.-S. Park, "Electroreflectance and photoluminescence study of InN," in Semiconductor Science and Technology, Vol. 20, pp. 1068, 2005. [DOI]
  10. E. K. Kim, J. S. Kim, K. Park, E. Yoon, and S.K. Noh, "Energy levels of InAs/InP quantum dots by thermal treatment," in Journal of the Korean Physical Society, Vol. 46, pp. S163, 2005.
  11. S.-Y. Kwon, H. J. Kim, H. Na, Y.-W. Kim, H.-C. Seo, H. J. Kim, Y. Shin, Y. Sun, Y.-H. Cho, J.-W. Yoon, H. M. Cheong, and E. Yoon, "Growth of In-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties," in Journal of the Korean Physical Society, Vol. 46, pp. S130, 2005.
  12. Sung-Nam Lee, J. K. Son, H. S. Paek, T. Sakong, J. S. Kwak, K.H. Ha, O. H. Nam, and Y. Park, Euijoon Yoon, J. Y. Kim, and Y.-H. Cho, S. S. Kim, Y. J. Lee, D. Y. Noh, "Investigation of thermal degradation on structural and optical qualities of InGaN/InGaN MQWs," in Institute of Physics Conference Series, Vol. 184, pp. 377, 2005.
  13. J. H. Cho, C. Sone, Y. Park and E. Yoon, "Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift," in Physica Status Solidi A - Applications and Materials Science, Vol. 202, pp. 1869, 2005. [DOI]
  14. Jaehee Cho, Jeong Wook Lee, Jin Seo Im, Cheolsoo Sone, Yongjo Park, Dongho Kim, Heonsu Jeon, Euijoon Yoon, Dong-Seok Leem, Tae-Yeon Seong, "Recent development of patterned structure light-emitting diodes," in Proceedings of SPIE, Vol. 5941, pp. 594102, 2005. [DOI]
  15. S. Y. Kwon, S. I. Baik, Y.-W. Kim, H. J. Kim, D. S. Ko, E. Yoon, J. W. Yoon, H. Cheong and Y. S. Park, "Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells," in Applied Physics Letters, Vol. 86, pp. 192105-1, 2005. [DOI]
  16. Jaehee Cho, Hyunsoo Kim, Hyungkun Kim, Jeong Wook Lee, Sukho Yoon, Cheolsoo Sone, Yongjo Park, and Euijoon Yoon, "Simulation and Fabrication of Highly Efficient InGaN-based LEDs with Corrugated Interface Substrate," in Physica Status Solidi C - Conferences, Vol. 2, pp. 2874, 2005. [DOI]
  17. J. S. Kim, E. K. Kim, K. Park and E. Yoon, "Strain effect on energy band of InAs/InP quantum dots by GaAs layer insertion," in Institute of Physics Conference Series, Vol. 184, pp. 433, 2005.
  18. S. Y. Kwon, H. J. Kim, Y. W. Kim and E. Yoon, "Strong room-temperature near-ultraviolet emission from In-rich InGaN/GaN nanostructures grown by metalorganic chemical vapor deposition," in Japanese Journal of Applied Physics Part 1, Vol. 44, pp. 7217, 2005. [DOI]
  19. E. K. Kim, J. S. Kim, S. Y. Kwon, H. J. Kim and E. Yoon, "Study on energy band of InGaN/GaN self-assembled quantum dots by deep-level transient spectroscopy," in Japanese Journal of Applied Physics Part 1 - Regular Papers Short Notes & Rev, Vol. 44, pp. 5670, 2005. [DOI]
  20. Kwangmin Park, Eungjin Ahn, Yu Jin Jeon, Hyeonsik M. Cheong, Jin Soak Kim, Eun Kyu Kim, Jungil Lee, Young Ju Park, Gun-Do Lee, Euijoon Yoon, "The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD," in Physica E - Low-dimensional Systems & Nanostructures, Vol. 26, pp. 169, 2005. [DOI]
• 2004
  1. Tai-Su Park, Hye Jin Cho, Jeong Dong Choe, Il Hwan Cho, Donggun Park, Euijoon Yoon, and Jong Ho Lee, "Characteristics of body-tied triple-gate pMOSFETs," in IEEE Electron Device Letter, Vol. 25, pp. 798, 2004. [DOI]
  2. Sung-Nam Lee, Tan Sakong, Wonseok Lee, Hosun Pa, Joongkon Son, Euijoon Yoon, Okhyun Nam, Y. Park, "Characterization of optical and electrical quality of Mg-doped InxGa1-xN grown by MOCVD," in Journal of Crystal Growth, Vol. 261, pp. 249, 2004. [DOI]
  3. Hyunho SHIN, Euijoon YOON, Yo-Han YOO and Woong LEE, "Comparison of the Strain-modified Band Gap Energies of Truncated and Untruncated InAs Quantum Dots in GaAs Matrix at Varying Inter-dot Spacings," in Journal of the Physical Society of Japan, Vol. 73, pp. 3378, 2004. [DOI]
  4. E. K. KIM, J. S. KIM, H. HWANG, K. PARK, E. YOON, J. H. KIM, I.-W. PARK and Y. J. PARK, "Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy," in Japanese Journal of Applied Physics, Vol. 43, pp. 3825, 2004. [DOI]
  5. J. S. Kim and E. K. Kim, H. Hwang, K. Park and E. Yoon, I.-W. Park, Y. J. Park, "Electrical Characterization of InAs/InP Self-Assembled Quantum Dots with InGaAs Strain-Relief Layers," in Journal of the Korean Physical Society, Vol. 45, pp. 170, 2004.
  6. J. S. Kim, E. K. Kim, H. J. Kim, E. Yoon, I.-W. Park, Y. J. Park, "Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy," in Physica Status Solidi B - Basic Research, Vol. 241, pp. 2811, 2004. [DOI]
  7. J. S. Kim, E. K. Kim, K. Park, E. Yoon, I.-W. Park, Y. J. Park, "Energy Levels of InAs/InP QD System with GaAs and InGaAs Insertion Layers by C-V and DLTS Methods," in Journal of the Korean Physical Society, Vol. 45, pp. 1296, 2004.
  8. Seung-Hyun Lim, Sukchan Song, Gun-Do Lee, Euijoon Yoon, and Jong-Ho Lee, "Facet Evolution in Selective Epitaxial Growth of Si by Cold Wall ultrahigh vacuum chemical vapor deposition," in J. Vac. Sci. Technol. B, Vol. 22, No. 682, 2004. [DOI]
  9. Jae Kyeong Jeong, Ho Kuen Song, Myung Yoon Um, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim , Euijoon Yoon, Cheol Seong Hwang, Hyeong Joon Kim, "Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition," in Materials Science Forum, Vol. 457-460, pp. 1597, 2004.
  10. Hyun Jin Kim, Hyunseok Na, Soon-Yong Kwon, Hui-Chan Seo, Hee Jin Kim, Yoori Shin, Keon-Hun Lee, Dong Hyuk Kim, Hye Jeong Oh, Sukho Yoon, Cheolsoo Sone, Yongjo Park, Euijoon Yoon, "Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition," in Journal of Crystal Growth, Vol. 269, pp. 95, 2004. [DOI]
  11. Sung-Nam Lee, J. K. Son, H. S. Paek, T. Sakong, W. Lee, K. H. Kim, S. S. Kim, Y. J. Lee, D. Y. Noh, E. Yoon, O. H. Nam, and Y. Park, "Growth pressure dependence of residual strain and threading dislocations in the GaN layer," in Physica Status Solidi C - Conferences, Vol. 1, pp. 2458, 2004. [DOI]
  12. Jae Kyeong Jeong, Hyun Jin Kim, Hui-Chan Seo, Hee Jin Kim, Euijoon Yoon, Cheol Seong Hwang, and Hyeong Joon Kim, "Improvement in the Crystalline Quality of Epitaxial GaN Films Grown by MOCVD by Adopting Porous 4H-SiC Substrate," in Electrochemical and Solid State Letters, Vol. 7, pp. C43, 2004. [DOI]
  13. Sung-Nam Lee, JoongKon Son, Tan Sakong, Wonseok Lee, Hosun Pa다, Euijoon Yoon, Jiyoung Kim, Yong-Hoon Cho, Okhyun Nam, Yongjo Park, "Investigation of optical and electrical properties of Mg-doped p-In(x)Ga(1-x)N, p-GaN and p-Al(y)Ga(1-y)N grown by MOCVD," in Journal of Crystal Growth, Vol. 272, pp. 455, 2004. [DOI]
  14. Seung-Hyun Lim, Sukchan Song, and Euijoon Yoon, Jong-Ho Lee, "Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition," in Journal of Vacuum Science & Technology B, Vol. 22, pp. 275, 2004. [DOI]
  15. Gun-Do Lee, Seung-Hyun Lim, and Euijoon Yoon, "Microscopic study on the behavior of the {311} facet in the selective epitaxial growth of Si(100)," in Applied Physics Letters, Vol. 85, pp. 4624, 2004. [DOI]
  16. S.-Y. Kwon, M.-H. Cho, P. Moon, H. J. Kim, H. Na, H.-C. Seo, H. J. Kim, Y. Shin, D. W. Moon, Y. Sun, Y.-H. Cho, and E. Yoon, "Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading," in Physica Status Solidi A - Applications and Materials Science, Vol. 201, pp. 2818, 2004. [DOI]
  17. Jinbo Jiang, Heedon Hwang, Hak Sun Lee, Byongju Kim, Kee Bong, Euijoon Yoon, "On astigmatism of multi-beam optical stress sensor mounted at large incident angle," in Journal of Crystal Growth, Vol. 260, pp. 277, 2004. [DOI]
  18. Yuanping Sun, Yong-Hoon Cho, Hwa-Mok Kim, T. W. Kang, S.-Y. Kwon and Euijoon Yoon, "Optical Properties of In-Rich InGaN/GaN Single Quantum Well Structures with High Density of Clusters," in Journal of the Korean Physical Society, Vol. 45, pp. S615, 2004.
  19. Hyeonsik Cheong and Yu Jin Jeon, Heedon Hwang, Kwangmin Park and Euijoon Yoon, "Optical Properties of InAs Quantum Dots Grown on InP Substrates," in Journal of the Korean Physical Society, Vol. 44, pp. 697, 2004.
  20. Heedon Hwang, Sukho Yoon, Hyeok Kwon, and Euijoon Yoon, Hong-Seung Kim and Jeong Yong Lee, Benjamin Cho, "Shapes of InAs quantum dots on InGaAs/InP," in Applied Physics Letters, Vol. 85, pp. 6383, 2004. [DOI]
  21. Gun-Do Lee, Seung-Hyun Lim and Euijoon Yoon, "The Behavior of the {311} facet in the Selective Epitaxial Growth of Si(100)," in Journal of Korean Physical Society, Vol. 45, pp. 851, 2004.
  22. Yong Suk Cho, Jeakyun Kim, Young Ju Park, Hyunseok Na, Hee Jin Kim, Hyun Jin Kim, Euijoon Yoon, Young Woon Kim, "The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer," in Physica Status Solidi B - Basic Research, Vol. 241, pp. 2722, 2004. [DOI]
  23. Hyunseok Na, Hyun Jin Kim, Soon-Yong Kwon, Cheolsoo Sone, Yongjo Park, Euijoon Yoon, "The formation of cubic GaNAs phase during the growth of thin GaNAs epilayers on GaN at low temperatures by metalorganic chemical vapor deposition," in Physica Status Solidi C - Conferences, Vol. 1, pp. 2462, 2004. [DOI]
  24. Gun-Do Lee and Euijoon Yoon, "Theoretical study on the temperature induced structural transition of the Si(311) surface," in Surface Science, Vol. 559, No. 63, 2004. [DOI]
  25. Tai-su Park, Hye Jin Cho, Jeong Dong Choe, Donggun Park, Euijoon Yoon, and Jong-Ho Lee, "Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions," in Japanese Journal of Applied Physics, Vol. 43, pp. 2180, 2004. [DOI]
• 2003
  1. Tai-su Park, Euijoon Yoon, Jong-Ho Lee, "A 40 nm body-tied FinFET (OMEGA MOSFET) using bulk Si wafer," in Physica E - Low-dimensional Systems & Nanostructures, Vol. 19, pp. 6, 2003. [DOI]
  2. Hyunseok Na, Hyun Jin Kim, Euijoon Yoon, Cheolsoo Sone, Yongjo Park, "Arsenic incorporation and growth mode of GaNAs grown by low-pressure metal―organic chemical vapor deposition," in Journal of Crystal Growth, Vol. 248, pp. 437, 2003. [DOI]
  3. Kihong Kim, Sukho Yoon and Euijoon Yoon, Yang Mo Koo and Jong-Lam Lee, "Aspect ratio dependent strains in InAs/InP quantum dots measured by synchrotron radiation x-ray diffraction," in Journal of Vacuum Science & Technology B, Vol. 21, pp. 183, 2003. [DOI]
  4. Seung-Hyun KIM, Jeong-Suong YANG, Chang Young KOO, Jung-Hoon YEOM, Joon-Shik PARK, Euijoon YOON, Cheol-Seong HWANG, Joon-Shik PARK, Sung-Goon KANG, Dong-Joo KIM, Jowoong HA, "Dielectric and Electromechanical Properties of Pb(Zr,Ti)O3 Thin Films for Piezo-Microelectromachenical System Devices," in Japanese Journal of Applied Physics Part 1 - Regular Papers Short Notes & Rev, Vol. 42, pp. 5952, 2003. [DOI]
  5. Soon-Yong Kwon, Hyun Jin Kim, Hyunseok Na, Hui?Chan Seo, Hee Jin Kim, Yoori Shin, Young-Woon Kim, SukhoYoon, Hye Jeong Oh, Cheolsoo Sone, Yongjo Park, Yuanping Sun, Yong-Hoon Cho, and Euijoon Yoon, "Effect of growth interruption on In-rich InGaN/GaN single quantum well structures on In-rich InGaN/GaN single quantum well structures," in Physica Status Solidi C - Conferences, pp. 2830, 2003. [DOI]
  6. Dong-Su LEE, Hyun-Jung WOO, Dong-Yeon PARK, Jowoong HA, Cheol Seong HWANG and Euijoon YOON, "Effects of the Microstructure of Platinum Electrode on the Oxidation Behavior of TiN Diffusion Barrier Layer," in Japanese Journal of Applied Physics Part 1 - Regular Papers Short Notes & Rev, Vol. 42, pp. 630, 2003. [DOI]
  7. Heedon Hwang, Kwangmin Park, Sukho Yoon, Euijoon Yoon, Hyeonsik M. Cheong, Young D. Kim, "Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties," in Proceedings of SPIE, Vol. 4999, pp. 229, 2003. [DOI]
  8. Hyun Jin Kim, Soon-Yong Kwon, Sanggiun Yim, Hyunseok Na, Bong Kee, E. Yoon, Jaehoon Kim, Si-Hyun Park, Heonsu Jeon, Sunwon Kim, Jun Ho Seo, Keunseop Park, Moon Suk Seon, Cheolsoo Sone, Ok Hyun Nam and Yongjo Park, "Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties," in Current Applied Physics, Vol. 3, pp. 351, 2003. [DOI]
  9. Gun-Do Lee C. Z. Wang, Jaejun Yu, Euijoon Yoon, and K. M. Ho, "Heat-induced transformation of nanodiamond into a tube-shaped fullerene : A molecular dynamics simulation," in Physical Review Letters, Vol. 91, No. 265701, 2003. [DOI]
  10. Seung-Hyun Lim, Sukchan Song, Tai-su Park, Seung-Yoon Lee, Gun-Do Lee, Jong-Ho Lee, and Euijoon Yoon, "Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon Patterned Si(100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition," in Japanese Journal of Applied Phyiscs, Vol. 42, pp. 3966, 2003. [DOI]
  11. T.J.Kim, Y.D.Kim, H.Hwang and E.Yoon, "Monitoring of III-V semiconductor surface by In-situ Surface PhotoAbsorption," in 진공학회지, Vol. 12, pp. 79, 2003.
  12. Heedon Hwang, Kwangmin Park, Jong-Hoon Kang, Eungjin Ahn, Hyeonsik M. Cheong, and Euijoon Yoon, "Optical properties of InAs/InP quantum dot stack grown by metalorganic chemical vapor deposition," in Physica Status Solidi C - Conferences, pp. 1347, 2003. [DOI]
  13. Heedon Hwang, Kwangmin Park, Jong-Hoon Kang, Sukho Yoon, Euijoon Yoon, "Optical properties of Si-doped InAs/InP quantum dots," in Current Applied Physics, Vol. 3, pp. 465, 2003. [DOI]
  14. JEONG-SUONG YANG, SEUNG-HYUN KIM, JUNG-HOON YEOM, CHANG-YOUNG KOO, CHEOL SEONG HWANG, EUIJOON YOON, DONG-JOO KIM, and JOWOONG HA, "Piezoelectric and Pyroelectric Properties of Pb(Zr,Ti)O3 Films for Micro-Sensors and Actuators," in Integrated Ferroelectrics, Vol. 54, pp. 515, 2003.
  15. Kwangmin Park, Heedon Hwang, Jong-Hoon Kang, Sukho Yoon, Yong Dong Kim, Euijoon Yoon, "Real time in situ monitoring of stacked InAs/InP quantum dots by spectral reflectance," in Journal of Crystal Growth, Vol. 248, pp. 201, 2003.
  16. S.-Y. KWON, H. J. KIM, B. KEE, H. Na and E. Yoon, "Reduction of Gallium Vacancy Concentration in Gallium Nitride Grown with Preheated Ammonia," in Physica Status Solidi C - Conferences, pp. 405, 2003. [DOI]
  17. Seung-Hyun Lim, Sukchan Song, Tai-su Park, and Euijoon Yoon, Jong-Ho Lee, "Si adatom diffusion on Si (100) surface in selective epitaxial growth of Si," in Journal of Vacuum Science & Technology B, Vol. 21, pp. 2388, 2003. [DOI]
  18. S. Hong, Y. L. Foo, K. A. Bratland, T. Spila, K. Ohmori, M. R. Sardela, Jr., J. E. Greene, and E. Yoon, "Smooth relaxed Si0.75 Ge0.25 layers on Si (001) via in situ rapid thermal annealing," in Applied Physics Letters, Vol. 83, pp. 4321, 2003. [DOI]
  19. Gun-Do Lee and Euijoon Yoon, "Structural evolution of the Si(113) surface: Ab initio and tight-binding molecular dynamics calculations," in Physical Review B, Vol. 68, No. 113304, 2003. [DOI]
  20. Hyun Jin Kim, Hyunseok Na, Soon-Yong Kwon, Hui?Chan Seo, Hae Jin Kim, Yoori Shin, Keon-Hun Lee, Young-Woon Kim, Sukho Yoon, Hye Jeong Oh, Chelsoo Sone, Yongjo Park, Yong -Hoon Cho, Yuanping Sun, and Euijoon Yoon, "The growth of In-rich InGaN/GaN single quantum wells by metalorganic chemical vapor deposition," in Physica Status Solidi C - Conferences, Vol. 0(7), pp. 2834, 2003. [DOI]
  21. Jeong-Suong YANG, Seung-Hyun KIM, Dong-Yeon PARK, Euijoon YOON, Tae, Joon-Shik PARK, Tae-Song KIM, Sung-Goon KANG and Jowoong HA, "Thickness Effects on the Pyroelectric Properties of Chemical-Solution-Derived Pb(Zr0.3, Ti0.7)O3 Thin Films for the Infra-Red Sensor Devices," in Japanese Journal of Applied Physics Part 1 - Regular Papers Short Notes & Rev, Vol. 42, pp. 5956, 2003. [DOI]
• 2002
  1. Gun-Do Lee, Seungwu Han, Jaejun Yu, and Jisoon Ihm, "Catalytic decomposition of acetylene on Fe(001): A first-principles study," in Physical Review B, Vol. 66, No. 081403(R), 2002. [DOI]
  2. H.-K. Yuh and E. Yoon, S. K. Shee, J. B. Lam, C.-K. Choi, G. H. Gainer, G. H. Park, S. J. Hwang, and J. J. Song, "Effect of the number of wells on optical and structural properties in InGaN quantum well structures grown by metalorganic chemical vapor deposition," in Journal of Applied Physics, Vol. 91, pp. 3483, 2002. [DOI]
  3. H.-K. Yuh, E. Yoon, S. I. Lee, Y. W. Park, and Y. T. Lee, "Effects of Pb/Pt Top Electrode on the Hydrogen Induced Degradation in Pb(Zr, Ti)O3," in Japanese Journal of Applied Physics Part 1 - Regular Papers Short Notes & Rev, Vol. 41, pp. 42, 2002. [DOI]
  4. T. J. Kim, Y. S. Ihn, G. Y. Seong and Y. D. Kim, T. W. Lee, H. Hwang, S. Yoon, and E. Yoon, "Two-step As-desorption from (001) InP observed by surface photoabsorption," in Applied Physics Letters, Vol. 81, pp. 61, 2002. [DOI]
• 2001
  1. Kyeongran YOO, Youngboo Moon, Tae-Wan LEE and Euijoon YOON, "Dielectric-Induced Interdiffusion of In0.53Ga0.47As/In0.52Al0.48As Multiple Quantum Wells by Two-Step Rapid Thermal Annealing," in Journal of the Korean Physical Society, Vol. 38, pp. 409, 2001.
  2. Hwan-Kuk Yuh, Jin-Won Park, Seung-Hyun Lim, Ki-Hyun Hwang, and Euijoon Yoon, "Low-temperature Si epitaxial growth on oxide patterned wafers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition," in Journal of Vacuum Science & Technology B, Vol. 19, pp. 323, 2001. [DOI]
  3. G.Y. Seong, Y.D. Kim, T.W. Lee, H. Hwang, S. Yoon, and E. Yoon, "Observation of an intermediate state during As-desorption on a (001) InP surface," in Journal of the Korean Physical Society, Vol. 39, pp. L961, 2001.
  4. Tae-Wan LEE, Ga Young SEONG, Young-Dong KIM, Heedon HWANG, Sukho YOON and Euijoon YOON, "Possibillity of Two-Step As-Desorption from (001) InP Using Surface Photoabsorption," in Japanese Journal of Applied Physics Part 1 - Regular Papers Short Notes & Rev, Vol. 40, pp. L980, 2001. [DOI]
  5. Dong-Su Lee, Dong-Yeon Park, Hyun-Jung Woo, Seung-Hyun Kim, Jowoong Ha and Euijoon Yoon, "Preferred Orientation Controlled Giant Grain Growth of Platinum Thin Films on SiO2/Si Substrates," in Japanese Journal of Applied Physics Part 2 - Letters, Vol. 40, pp. L1, 2001. [DOI]
  6. M.C.Ridgway, C.J.Glover, K.M.Yu, G.J.Foran, T.W.Lee, Y.Moon, E.Yoon, "Structural characterisation of amorphised compound semiconductors," in Nuclear Instruments & Methods in Physics Research Section B - Beam Interactions with Materials and Atoms, Vol. 175-177, pp. 280, 2001. [DOI]
• 2000
  1. D. C. Marra, E. S. Aydil, S.-J. Joo, E. Yoon, and V. I. Srdanov, "Angle-dependent photoluminescence spectra of hydrogenated amorphous silicon thin films," in Applied Physics Letters, Vol. 77, pp. 3346, 2000. [DOI]
  2. Sukho Yoon, Young-Boo Moon, Tae-Wan Lee, Heedon Hwang, Euijoon Yoon, Young-Dong Kim, Uk-Hyun LEE, Dong-Han Lee, Hong-Seung Kim, and Jeong Yong Lee, "Effects of Growth Interruption on the Evolution of InAs/InP Self-Assembled Quantum Dots," in Journal of Electronic Materials, Vol. 29, pp. 535, 2000. [DOI]
  3. Youngboo Moon and Euijoon Yoon, "Effects of PH3/H2 purge on the As concentration profile of InAsxP1-x/InP single quantum wells," in Journal of Crystal Growth, Vol. 212, pp. 61, 2000. [DOI]
  4. Gun-Do Lee, Seungwu Han, Jaejun Yu, and Jisoon Ihm, "First-Principles study of the Acetylene Decomposition Process on the Fe(100) Surface through the Parallel Computation," in The Proceeding of the 5th Korea Science and Technology Infrastructure Workshop, Vol. 25, 2000.
  5. Young Dong Kim, Min Soo Lee, Tae-Wan Lee, Heedon Hwang, Sukho Yoon, Yongboo Moon, Euijoon Yoon, "In situ analysis of surface photoabsorption spectra during InP ALE in metal organic chemical vapor deposition," in Microelectronic Engineering, Vol. 51-52, pp. 43, 2000. [DOI]
  6. Hyunseok Na, Hyun Jin Kim, Soon Yong Kwon, Euijoon Yoon, Youngboo Moon and Min Hong Kim, "In-Situ, Real-Time Spectral Reflectance Monitoring of GaN Growth," in Journal of the Korean Physical Society, Vol. 37, pp. 971, 2000.
  7. Youngboo Moon, Tae-Wan. Lee, Sukho Yoon, Kyeongran Yoo, and Euijoon Yoon, "Observation of two independent sources for arsenic carryover," in Journal of Crystal Growth, Vol. 208, pp. 160, 2000. [DOI]
• 1999
  1. G. D. Lee, C. Z. Wang, Z. Y. Lu and K. M. Ho, "Addimer Diffusion along the Trogh between Dimer Rows on Si(100)," in Surface Science, Vol. 426, No. L427, 1999. [DOI]
  2. G. D. Lee, C. Z. Wang, Z. Y. Lu and K. M. Ho, "Addimer Diffusion on Si(100)," in Journal of Korean Physical Society, Vol. 35, No. 27, 1999.
  3. G. D. Lee, C. Z. Wang, Z. Y. Lu and K. M. Ho, "Addimer Diffusion on the Si(100) Surface," in Surface Review and Letter, Vol. 6, No. 1015, 1999.
  4. T.-W. Lee, H. Hwang, Y. Moon, E. Yoon, and Y. D. Kim, "Adsorption and Desorption of P on (001) InP Surface in Metalorganic Chemical Vapor Deposition by Surface Photoabsorption," in Journal of the Korean Physical Society, Vol. 34, pp. S461, 1999.
  5. Tae-Wan Lee, Heedon Hwang, Youngboo Moon, Euijoon Yoon, and Young Dong Kim, "Analysis of P adsorption and desorption on the (001) InP surface using surface photoabsorption," in Journal of Vacuum Science & Technology A - Vacuum Surfaces and Films, Vol. 17, pp. 2663, 1999. [DOI]
  6. Young-Dong Kim, T.-W. Lee, H. Hwang, Y. Moon, E. Yoon, and F. Nakamura, "Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces," in Japanese Journal of Applied Physics Part 1 - Regular Papers Short Notes & Rev, Vol. 38, pp. 5033, 1999. [DOI]
  7. Tae-Wan Lee, H. Hwang, Y. Moon, E. Yoon, "Analysis of the Surface Photoabsorption Signal During Self-limited Submonolayer Growth of InP in Metalorganic Chemical Vapor Deposition," in Journal of the Korean Physical Society, Vol. 34, pp. S25, 1999.
  8. Min Hong Kim, T.S. Park, E. Yoon, D.S. Lee, D.Y. Park, H.J. Woo, D.I. Chun, J.W. Ha, "Changes in preferred orientation of Pt thin films deposited by dc magnetron sputtering using Ar/O-2 gas mixtures," in Journal of Materials Research, Vol. 14, pp. 1255, 1999.
  9. Y.S. Ahn, D.S. Lee, E.J.Ahn, and E. Yoon, "Deposition of PbTiO3 thin films by reactive sputtering," in 진공학회지, Vol. 3, pp. 126, 1999.
  10. MIN HONG KIM, HYUN JIN KIM, HYUN SEOK NA, FENG QI, and EUIJOON YOON, "Effect of Hydrogen on GaN Growth by Remote Plasma-Enhanced Metal-Organic Chemical Vapor Deposition," in Physica Status Solidi A - Applications and Materials Science, Vol. 176, pp. 337, 1999. [DOI]
  11. Sukho Yoon, Y. Moon, T.-W. Lee, E. Yoon, and Y.D. Kim, "Effects of As/P exchange reaction on the formation of InAs/InP quantum dots," in Applied Physics Letters, Vol. 74, pp. 2029, 1999. [DOI]
  12. Min Hong Kim, T.S. Park, D.S. Lee, E. Yoon, D.Y. Park, H.J. Woo, D.I. Chun, J.W. Ha, "Highly (200)-oriented Pt films on SiO2/Si substrates by seed selection through amorphization and controlled grain growth," in Journal of Materials Research, Vol. 14, pp. 634, 1999.
  13. Jin-Won Park, Ki-Hyun Hwang, and Euijoon Yoon, "Low temperature in situ boron doped Si epitaxial growth by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition," in Journal of Vacuum Science & Technology B, Vol. 17, pp. 213, 1999. [DOI]
  14. Youngboo Moon and E. Yoon, "Quantitative analysis of the compositional profile of a single quantum well by grazing incidence x-ray reflectivity and photoluminescence," in Applied Physics Letters, Vol. 74, pp. 2152, 1999. [DOI]
  15. Sukho Yoon, Y. Moon, T.-W. Lee, H. Hwang, E. Yoon, and Y.D. Kim, "Shape change of InAs self-assembled quantum dots induced by As/P exchange reaction," in Thin Solid Films, Vol. 357, pp. 81, 1999. [DOI]
  16. C. J. Glover, M.C. Ridgway, K.M. Yu, G.J. Foran, T.-W. Lee, Y. Moon, and E. Yoon, "Structural characterization of amorphized InP: Evidence for chemical disorder," in Applied Physics Letter, Vol. 74, pp. 1713, 1999. [DOI]
  17. Sukho Yoon, Y. Moon, T. W. Lee, H. Hwang, E. Yoon, "The Role of Strain-driven In Migration in the Growth of Self-assembled InAs Quantum Dots on InP," in Journal of the Korean Physical Society, Vol. 34, pp. S12, 1999.
  18. K.Y. Suh, H.H. Lee, and E. Yoon, "Two-step kinetics of As/P exchange reaction," in Journal of Applied Physics, Vol. 85, pp. 233, 1999. [DOI]
  19. S.-J. JOO, S.-H. LIM and E. YOON, W. C. CHOI and E. K. KIM, D. C. MARRA and E. S. AYDIL, "Visible photoluminescence at room temperature from a-Si : H films grown by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition," in Journal of the Korean Physical Society, Vol. 35, pp. S1025, 1999.
• 1998
  1. Gun-Do Lee, C. Z. Wang, Z. Y. Lu, and K. M. Ho, "Ad-Dimer Diffusion Between Trough and Dimer Row on Si(100)," in Physical Review Letter, Vol. 81, No. 5872, 1998. [DOI]
  2. Sang Kee Si, S.J. Kim, Y. Moon, and E. Yoon, "Deep Levels in Heavily Zn-doped InP Layers Implanted with Ti and Ti/P," in Journal of Applied Physics, Vol. 83, pp. 2366, 1998. [DOI]
  3. Seung-Hyun Lim, J.-W. Park, H.-K. Yuh, E. Yoon and S. I. Lee, "Dry cleaning of fluorocarbon residues by low-power electron cyclotron resonance hydrogen plasma," in Journal of the Korean Physical Society, Vol. 33, pp. S108, 1998.
  4. Cheolsoo Sone, M.H. Kim, H.J. Kim, E. Yoon, "Effect of hydrogen on carbon incorporation in GaN grown by remote plasma-enhanced metal- organic chemical vapor deposition," in Journal of Crystal Growth, Vol. 180/190, pp. 321, 1998. [DOI]
  5. Sung-Jae Joo, E. Yoon, S.H. Hwang, K.W. Whang, S.K. Chun, Y.D. Kim, "Growth of SiGe/Si multiple quantum wells by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition," in Thin Solid Films, Vol. 321, pp. 111, 1998. [DOI]
  6. Youngboo Moon, S. Si, E. Yoon and S. J. Kim, "Low temperature photoluminescence characteristics of Zn-doped InP grown by metalorganic chemical vapor deposition," in Journal of Applied Physics, Vol. 83, pp. 2261, 1998. [DOI]
  7. Sang Kee Si, S.J. Kim, Y.-B. Moon and E. Yoon, "Optical Properties of Cd- and Zn-diffused Layers in InP," in Journal of the Korean Physical Society, Vol. 32, pp. 162, 1998.
  8. F. Nakamura, Y.D. Kim, E. Yoon, D.V. Forbes, J.J. Coleman, "Thickness monitoring of GaAs growth by surface photoabsorption in metalorganic chemical vapor deposition," in Journal of Applied Physics, Vol. 83, pp. 775, 1998. [DOI]
• 1997
  1. Gun-Do Lee, Chiduck Hwang, M H Lee and Jisoon Ihm, "Ab-initio Pseudopotential Study of the Structural and Electronic Properties of Znte under high pressure," in Journal of Physics: Condensed matter, Vol. 9, No. 6619, 1997. [DOI]
  2. Ki-Hyun Hwang, J.-W. Park, E. Yoon, K.-W. Whang, and J. Y. Lee, "Amorphous {100} platelet formation in (100) Si induced by hydrogen plasma treatment," in Journal of Applied Physics, Vol. 81, pp. 74, 1997. [DOI]
  3. T.W. Lee, Y.B. Moon, J.H. Choi, Y.D. Kim, E. Yoon, "Asymmetric growth behavior of selectively grown InP on vicinal (100) surfaces by low-pressure metal-organic chemical vapor deposition," in Journal of Crystal Growth, Vol. 182, pp. 299, 1997. [DOI]
  4. Lee JH, Si SK, Moon YB, Yoon E, Kim SJ, "Bandgap tuning of In0.53Ga0.47As/InP multiquantum well structure by impurity free vacancy diffusion using In0.53Ga0.47As cap layer and SiO2 dielectric capping," in Electronic Letters, Vol. 33, pp. 1179, 1997. [DOI]
  5. Min Hong Kim, C. Sone, J.H. Yi, E. Yoon, "Changes in growth mode of low temperature GaN buffer layers with nitrogen plasma nitridation of sapphire substrates," in Applied Physics Letters, Vol. 71, pp. 1228, 1997. [DOI]
  6. C.Z. Wang, B.C. Pan, M.S. Tang, H. Haas, M. Sigalas, G.D. Lee, and K.M. Ho, "Environment-dependent tight-binding potential model," in MRS symposium proceeding, Vol. 491, No. 211, 1997.
  7. K.-H. Hwang, J.-W. Park, E. Yoon, K.-W. Whang, and J. Y. Lee, "Mechanism of surface roughness in hydrogen plasma cleaned (100) silicon at low temperatures," in Journal of the Electrochemical Society, Vol. 144, pp. 335, 1997. [DOI]
  8. Y.D. Kim. S.H. Hwang, K.W. Whang, E. Yoon, M.V. Klein, and J.-M. Baribeau, "Observation of E2 peak splitting of Si-Ge short period superlattice," in Journal of the Korean Physical Society, Vol. 30, pp. S284, 1997.
  9. Y.D. Kim, M.V. Klein, J.M. Baribeau, S.H. Hwang, K.W. Whang, E. Yoon, "Spectroscopic ellipsometry study on E2 peak splitting of Si-Ge short period superlattices," in Journal of Applied Physics, Vol. 81, pp. 7952, 1997. [DOI]
  10. Y.D. Kim, F. Nakamura, E. Yoon, D.V. Forbes, X. Li, and J.J. Coleman, "Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650oC by MOCVD," in Journal of Electronic Materials, Vol. 26, pp. 1164, 1997.
  11. Lee T, Moon Y, Yoon E, "Symmetric growth behavior of selectively grown InP epilayers on vicinal (100) InP by low pressure metalorganic chemical vapor deposition," in Institute of Physics Conference Series, Vol. 155, pp. 239, 1997.
  12. 손철수, 김민홍, 이재형, 윤의준, "원격플라즈마 유기금속화학증착장치의 제작 및 (0001) 사파이어 기판위의 저온 GaN 박막 성장," in 응용물리, Vol. 10, pp. 133, 1997.
• 1996
  1. Park JW, Si SK, Moon YB, Sone CS, Yeo D, Kim MJ, Kim SJ, Yoon E, Kim CD, Kim TI, "Design and fabrication technologies of a one-chip p-i-n/FET for 155Mbps local loop applications," in Institute of Physics Conference Series, Vol. 145, pp. 689, 1996.
  2. Jin-Won Park, K.-H. Hwang, S.-J. Joo, E. Yoon, S.-H. Hwang, and K.-W. Whang, "In situ boron doping of Si and Si1-xGex epitaxial layers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition," in Journal of Vacuum Science & Technology A - Vacuum Surfaces and Films, Vol. 14, pp. 1072, 1996. [DOI]
  3. Gun-Do Lee and Jisoon Ihm, "Micorscopic Study of the Pressure-induced Structural Phase Transition of ZnTe," in Physical Review B (rapid communication), Vol. 53, No. R7622, 1996. [DOI]
  4. Y.D. Kim, F. Nakamura, E. Yoon, D.V. Fobes, and J.J. Coleman, "Monolayer epitaxy of GaAs at 650oC by metal organic chemical vapor deposition with surface photoabsorption monitoring," in Applied Physics Letters, Vol. 69, pp. 4209, 1996. [DOI]
  5. Seok-Hee Hwang, Y.-P. Eo, J.-H. Seo, K.-W. Whang, E. Yoon, and H.-S. Tae, "Noncontact minority carrier lifetime measurement of Si and SiGe epilayers prepared by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition," in Journal of Vacuum Science & Technology A - Vacuum Surfaces and Films, Vol. 14, pp. 1033, 1996. [DOI]
  6. 양정승, 김민홍, 윤의준, "Pt 박막의 반응성 이온식각," in 진공학회지, Vol. 5, pp. 263, 1996.
• 1995
  1. Heung-Sik Tae, S.-H. Hwang, S.-J. Park, E. Yoon, and K.-W. Whang, "Effects of process parameters on low-temperature silicon homoepitaxy by ultrahigh -vacuum electron-cyclotron-resonance chemical-vapor deposition," in Journal of Applied Physics, Vol. 78, pp. 4112, 1995. [DOI]
  2. Heung-Sik Tae, Sang-June Park, Seok-Hee Hwang, Ki-Hyun Hwang, Euijoon Yoon, and Ki-Woong Whang, "Low-temperature in situ cleaning of silicon (100) surface by electron cyclotron resonance hydrogen plasma," in Journal of Vacuum Science & Technology B, Vol. 13, pp. 908, 1995. [DOI]
  3. Gun-Do Lee, M. H. Lee, and Jisoon Ihm, "Role of d Electrons in the Zinc-blende Semiconductors ZnS, ZnSe, and ZnTe," in Physical Review B, Vol. 52, No. 1459, 1995. [DOI]
  4. Ki-Hyun Hwang, E. Yoon, K.-W. Whang, and J. Y. Lee, "Surface roughness and defect morphology in electron cyclotron resonance hydrogen plasma cleaned (100) silicon at low temperatures," in Applied Physics Letters, Vol. 67, pp. 3590, 1995. [DOI]
  5. 문영부, 박형수, 윤의준, "저압 유기금속 화학증착법을 이용한 InP 에피성장에 대한 기판의 온도와 PH3/TMIn 비의 영향," in 진공학회지, Vol. 4, pp. 394, 1995.
• 1994
  1. Heung-Sik Tae, S.-H. Hwang, S.-J. Park, E. Yoon, and K.-W. Whang, "Low-temperature silicon homoepitaxy by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition," in Applied Physics Letters, Vol. 64, pp. 1021, 1994. [DOI]
• 1993
  1. E.S. Aydil, K.P Giapis, R.A. Gottscho, V.M. Donnelly, and E. Yoon, "Ammonia plasma passivation of GaAs in downstream microwave and radio-frequency parallel plate plasma reactors," in Journal of Vacuum Science & Technology B, Vol. 11, pp. 195, 1993. [DOI]
  2. J.A. Gregus, M.F. Vernon, R.A. Gottscho, G.R. Scheller, W.S. Hobson, R.L. Opila, and E. Yoon, "Low Temperature Plasma Etching of GaAs, AlGaAs, and AlAs," in Plasma Chem. Plasma P., Vol. 13, pp. 521, 1993. [DOI]
  3. Jeffrey.A. Gregus, C.A. Green, E. Yoon, F.W. Ostermayer, T.R. Hayes, R. Pawel다, and R.A. Gottscho, "Real-time latent image monitoring during holographic fabrication of submicron diffraction gratings," in Journal of Vacuum Science & Technology B, Vol. 11, pp. 2468, 1993. [DOI]
• 1992
  1. Euijoon Yoon, Richard A. Gottscho, Vincent M. Donnelly, and Henry S. Luftman, "GaAs surface modification by room-temperature hydrogen plasma passivation," in Applied Physics Letters, Vol. 60, pp. 2681, 1992. [DOI]
  2. Euijoon Yoon, Richard A. Gottscho, Vincent M. Donnelly, and Willian S. Hobson, "In situ passivation o GaAs after BCL3/Cl2 reactive ion etching," in Journal of Vacuum Science & Technology B, Vol. 10, pp. 2197, 1992. [DOI]
  3. Euijoon Yoon, Christian A. Green, Richard A. Gottscho, and T.R. Hayes, "Latent image diffraction from submicron photoresist gratings," in Journal of Vacuum Science & Technology B, Vol. 10, pp. 2230, 1992. [DOI]
• 1991
  1. Euijoon Yoon and Rafael Reif, "Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two-dimensional-like nucleation with an in situ H2/AsH3 plasma cleaning at 450 ㅇC," in Applied Physics Letters, Vol. 58, pp. 862, 1991. [DOI]